MA3G762

Schottky Barrier Diodes (SBD) MA3G762 Silicon epitaxial planar type (cathode common) Unit : mm 0.7 ± 0.1 For switching power supply I Features Forward current (average) IF(AV): 20 A type Repetitive peak reverse voltage VRRM: 90 V type High reliability caused by sealed in the TOP-3F (Full-pack package) Cathode common dual type 15.0 ± 0.5 7.2 ± 0.3 5.0 ± 0.2 3.2 ± 0.2 21.0 ± 0.5 15.0 ± 0.2 φ 3.2 ± 0.1 3.5 ± 12.7 ± 0.3 0.3 Solder Dip 2.0 ± 0.1 16.2 ± 0.5 2.0 ± 0.1 0.6 − 0.1 + 0.2 1.1 ± 0.1 5.45 ± 0.3 I Absolute Maximum Ratings Ta = 25°C Parameter Repetitive peak reverse voltage Average forward current Non-repetitive peak forward surge current* Junction temperature Storage temperature Symbol VRRM IF(AV) IFSM Tj Tstg Rating 90 20 130 −40 to +125 −40 to +125 Unit V A A °C °C 10.9 ± 0.5 1 2 3 1 : Anode 2 : Cathode (Common) 3 : Anode TOP-3F (TO-3F Full-Pack Package ) Marking Symbol: MA3G762 Internal Connection Note) * : Sine half-wave; 10 ms/cycle 1 2 3 I Electrical Characteristics Ta = 25°C Parameter Reverse current (DC) Forward voltage (DC) Thermal resistance Symbol IR VF Rth(j-c) VR = 90 V IF = 10 A Direct current (between junction and case) Conditions Min Typ Max 5 0.85 1.5 Unit mA V °C/W Note) Rated input/output frequency: 100 MHz 1 MA3G762 IF  V F 102 102 Schottky Barrier Diodes (SBD) IR  V R 40 Ta = 125°C PD(AV)  IF(AV) Average forward power PD(AV) (W) 35 30 25 1/3 20 15 10 5 0 1/2 DC t0 t1 10 100°C Reverse current IR (mA) Forward curre...