Schottky Barrier Diodes (SBD)
MA3D798 (MA10798)
Silicon epitaxial planar type (cathode common)
For switching mode power ...
Schottky Barrier Diodes (SBD)
MA3D798 (MA10798)
Silicon epitaxial planar type (cathode common)
For switching mode power supply
I Features
IF(AV) = 20 A rectification is possible Cathode-common dual type
Low forward
voltage: VF < 0.47 V (at IF = 10 A) TO-220D-A1 package
I Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Unit
Repetitive peak reverse-
voltage
VRRM
30
V
Average forward current
IF(AV)
20
A
Non-repetitive peak forward-
IFSM
120
A
surge-current *
Junction temperature Storage temperature
Tj
−40 to +125
°C
Tstg
−40 to +125
°C
Note) *: Half sine wave; 10 ms/cycle
13.7±0.2 4.2±0.2
Solder Dip
15.0±0.5
9.9±0.3
Unit: mm
4.6±0.2 2.9±0.2
3.0±0.5
φ 3.2±0.1
1.4±0.2 1.6±0.2
0.8±0.1
2.6±0.1 0.55±0.15
2.54±0.30 5.08±0.50
123
1 : Anode 2 : Cathode (common) 3 : Anode TO-220D-A1 Package
I Electrical Characteristics Ta = 25°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Reverse current (DC) Forward
voltage (DC) High
voltage rectification
IR VF Rth(j-c)
VR = 30 V IF = 10 A Smoothed current (between junction and case)
5
mA
0.47
V
3 °C/W
Note) Rated input/output frequency: 150 MHz
Publication date: August 2001
Note) The part number in the parenthesis shows conventional part number.
SKH00049AED
1
MA3D798
Forward current IF (A)
IF VF
102
Ta
=
125°C
75°C
25°C –20°C
10
1
10−1
10−2
10–3 0
0.2 0.4 0.6 0.8 1.0 1.2 Forward
voltage VF (V)
Reverse current IR (mA)
IR VR
103
102
Ta = 125°C
10 75°C
1
10−1...
