MA3D761

Schottky Barrier Diodes (SBD) MA3D761 (MA7D61) Silicon epitaxial planar type (cathode common) For switching mode power supply 9.9±0.3 Unit: mm 4.6±0.2 2.9±0.2 3.0±0.5 ■ Features φ 3.2±0.1 15.0±0.5 Low forward voltage VF High dielectric breakdown voltage: > 5 kV Easy-to-mount, due to its V cut lead end 1.4±0.2 1.6±0.2 2.6±0.1 ■ Absolute Maximum Ratings Ta = 25°C 0.8±0.1 0.55±0.15 / Parameter Symbol Rating Unit 13.7±0.2 4.2±0.2 Solder Dip 2.54±0.30 e ) Repetitive peak reverse voltage VRRM 90 V c type Forward current (Average) IF(AV) 10 A n d ge. ed Non-repetitive peak forward IFSM 100 A sta tinu surge current * a e cle con Junction temperature lifecy d, dis Storage temperature Tj −40 to +125 °C Tstg −40 to +125 °C n u duct type Note) *: Half sine wave; 10 ms/cycle 5.08±0.50 123 1: Anode 2: Cathode (common) 3: Anode TO-220D-A1 Package ainteontinincludestyfpoell,opwlianngefdoudrisPcroontinued ■ Electrical Characteristics Ta = 25°C ± 3°C c tinued ance Parameter Symbol Conditions Min Typ Max Unit M is con inten Forward voltage /Dis ma Reverse current D ance type, Thermal resistance (j-c) VF IR Rth(j-c) IF = 5 A, TC = 25°C VR = 90 V, TC = 25°C 0.85 V 3 mA 3.0 °C/W inten nce Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes. a na 2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body M ...