Schottky Barrier Diodes (SBD)
MA3D750 (MA7D50), MA3D750A (MA7D50A)
Silicon epitaxial planar type (cathode common)
For...
Schottky Barrier Diodes (SBD)
MA3D750 (MA7D50), MA3D750A (MA7D50A)
Silicon epitaxial planar type (cathode common)
For switching mode power supply
9.9±0.3
Unit: mm
4.6±0.2 2.9±0.2
3.0±0.5
■ Features
φ 3.2±0.1
15.0±0.5
Low forward
voltage VF High dielectric breakdown
voltage: > 5 kV
Easy-to-mount, due to its V cut lead end
1.4±0.2 1.6±0.2
2.6±0.1
■ Absolute Maximum Ratings TC = 25°C
0.8±0.1
0.55±0.15
/ Parameter
Symbol Rating
Unit
13.7±0.2 4.2±0.2
Solder Dip
2.54±0.30
e ) Repetitive peak MA3D750
VRRM
40
V
c type reverse-
voltage MA3D750A
45
n d tage. ued Forward current (Average)
IF(AV)
10
A
le s ntin Non-repetitive peak forward
IFSM
120
A
a e c co surge current *
lifecy , dis Junction temperature
n u duct typed Storage temperature
Tj
−40 to +125
°C
Tstg
−40 to +125
°C
te tin Pro ued Note) *: Half sine wave; 10 ms/cycle
5.08±0.50
123
1: Anode 2: Cathode
(Common) 3: Anode TO-220D-A1 Package
ain onincludestyfpoell,opwlianngefdoudriscontin ■ Electrical Characteristics TC = 25°C ± 3°C
c tinued ance Parameter
Symbol
Conditions
Min Typ Max Unit
M is con inten Forward
voltage
/Dis ma Reverse current
MA3D750
D ance type, MA3D750A
ten ce Thermal resistance (j-c)
VF IR
Rth(j-c)
IF = 5 A, TC = 25°C VR = 40 V, TC = 25°C VR = 45 V, TC = 25°C
0.55
V
3
mA
3
3.0 °C/W
Main tenan Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes. ain 2. This product is sensitive to el...
