Schottky Barrier Diodes (SBD)
MA2ZD02
Silicon epitaxial planar type
Unit : mm
For high-frequency rectification
K A 0.6...
Schottky Barrier Diodes (SBD)
MA2ZD02
Silicon epitaxial planar type
Unit : mm
For high-frequency rectification
K A 0.625
I Features
0.5 ± 0.1
2
1
Parameter Reverse
voltage (DC) Repetitive peak reverse
voltage Average forward current Non-repetitive peak forward surge current* Junction temperature Storage temperature
Symbol VR VRRM IF(AV) IFSM Tj Tstg
Rating 20 20 500 3 125 −55 to +125
Unit V V mA A °C °C
0.4 ± 0.1
1.7 ± 0.1 2.5 ± 0.2
0.4 ± 0.1
1 : Anode 2 : Cathode S-Mini Type Package (2-pin)
Note) * : The peak-to-peak value in one cycle of 50 Hz sine-wave (nonrepetitive)
Marking Symbol: 2H Internal Connection
2
1
I Electrical Characteristics Ta = 25°C
Parameter Reverse current (DC) Symbol IR1 IR2 Forward
voltage (DC) VF1 VF2 Terminal capacitance Reverse recovery time* Ct trr VR = 5 V VR = 10 V IF = 10 mA IF = 500 mA VR = 0 V, f = 1 MHz IF = IR = 100 mA Irr = 0.1 · IR, RL = 100 Ω 0.3 0.5 60 5 Conditions Min Typ Max 1 10 0.4 0.55 Unit µA µA V V pF ns
Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment 2. Rated input/output frequency: 1 000 MHz 3. * : trr measuring instrument
Bias Application Unit N-50BU tr 10% Input Pulse tp t IF trr t Irr = 0.1 · IR IF = 100 mA IR = 100 mA RL = 100 Ω Output Pulse
A
VR Pulse Generator (PG-10N) Rs = 50 Ω W.F.Analyzer (SAS-8130) Ri = 50 Ω
90% tp = 2 µs tr = 0.35 ns δ = 0.05
0...