Variable Capacitance Diodes
MA2Z377
Silicon epitaxial planar type
Unit : mm
For VCO of a UHF band radio I Features
• S...
Variable Capacitance Diodes
MA2Z377
Silicon epitaxial planar type
Unit : mm
For VCO of a UHF band radio I Features
S-mini type package, allowing downsizing of equipment and automatic insertion through the taping package
0.4 ± 0.15
INDICATES CATHODE
0.4 ± 0.15
1
2
1.7 ± 0.1 2.5 ± 0.2
I Absolute Maximum Ratings Ta = 25°C
Parameter Reverse
voltage (DC) Forward current (DC) Junction temperature Storage temperature Symbol VR IF Tj Tstg Rating 12 20 150 −55 to +150 Unit V mA °C °C
0.9 ± 0.1
0 to 0.05
1 : Anode 2 : Cathode S-Mini Type Package (2-pin)
Marking Symbol: 7D
I Electrical Characteristics Ta = 25°C
Parameter Reverse current (DC) Diode capacitance Symbol IR CD(2V) CD(10V) Capacitance ratio Series resistance* CD(2V)/CD(10V) rD VR = 1 V, f = 470 MHz VR = 12 V VR = 2 V, f = 1 MHz VR = 10 V, f = 1 MHz 2.80 1.10 2.20 0.40 Conditions Min Typ Max 10 3.40 1.50 2.80 0.60 Unit nA pF pF Ω
Note) 1 Rated input/output frequency: 470 MHz 2 * : rf measuring instrument: YHP MODEL 4191A RF IMPEDANCE ANALYZER
0.16 − 0.06
+ 0.1
0.3 − 0.05
+ 0.1
1.25 ± 0.1
1
MA2Z377
CD VR
10 f = 1 MHz Ta = 25°C 120
Variable Capacitance Diodes
IF V F
1.03 f = 1 MHz VR = 1 V 2V 4V 10 V
CD Ta
5
100
1.02
Diode capacitance CD (pF)
3 2
Forward current IF (mA)
1
60
25°C
− 40°C
CD(Ta) CD(Ta = 25°C)
80
Ta = 60°C
1.01
1.00
0.5 0.3 0.2
40
0.99
20
0.98
0.1
0
2
4
6
8 10 12 14 16 18 20
0
0
0.2
0.4
0.6
0.8
1.0
1.2
0.97
0
20
40
60
80
100
Reverse
voltage V...