MA2Z304

Variable Capacitance Diodes MA2Z304 (MA304) Silicon epitaxial planar type Unit: mm For VCO s Features 0.30+0.10 –0.05 2 1.7±0.10 1.25±0.10 s Absolute Maximum Ratings Ta = 25°C Parameter Reverse voltage (DC) Junction temperature Storage temperature Symbol VR Tj Tstg Rating 30 150 −55 to +150 Unit V °C °C 7˚ (0.4) Good linearity and large capacitance-ratio in CD − VR relation Small series resistance rD S-Mini type package, allowing downsizing of equipment and automatic insertion through the taping package 2.5±0.2 1 0.16 +0.10 –0.06 0.00±0.05 0.90±0.15 0.9±0.1 5˚ 1: Anode 2: Cathode SMini2-G1 Package Marking Symbol: 8R s Electrical Characteristics Ta = 25°C Parameter Reverse current (DC) Diode capacitance Symbol IR CD(1V) CD(4V) Capacitance ratio Series resistance * CD(1V)/CD(4V) rD VR = 4 V, f = 100 MHz VR = 28 V VR = 1 V, f = 1 MHz VR = 4 V, f = 1 MHz 24.8 6.0 3.0 1.0 Conditions Min Typ Max 10 29.8 8.3  Ω Unit nA pF Note) 1. Rated input/output frequency: 100 MHz 2. * : Measuring instrument; YHP MODEL 4191A RF IMPEDANCE ANALYZER Note) The part number in the parenthesis shows conventional part number. Publication date: April 2002 SKD00027BED (0.4) 1 MA2Z304 I F  VF 120 25°C 100 CD  VR f = 1 MHz Ta = 25°C CD  Ta 1.04 f = 1 MHz VR = 1 V 100 50 1.03 4V Diode capacitance CD (pF) Forward current IF (mA) 60 10 CD (Ta) CD (Ta = 25°C) 0 4 8 12 16 20 24 28 32 36 40 80 Ta = 60°C −40°C 30 20 1.02 1.01 40 5 3 2 1.00 20 0.99 0 0 0.2 0.4 ...