MA2Z081

Band Switching Diodes MA2Z081 Silicon epitaxial planar type Unit : mm For band switching I Features S-mini type package, allowing downsizing of equipment and automatic insertion through the taping package Small diode capacitance CD Low forward dynamic resistance rf Optimum for a band switching of a tuner INDICATES CATHODE 0.4 ± 0.15 1 2 0.4 ± 0.15 1.7 ± 0.1 2.5 ± 0.2 Reverse voltage (DC) Forward current (DC) Operating ambient temperature* VR IF Topr Tstg 35 100 −25 to +85 −55 to +150 V mA °C °C 0 to 0.05 Parameter Symbol Rating Unit 0.9 ± 0.1 I Absolute Maximum Ratings Ta = 25°C 1 : Anode 2 : Cathode S-Mini Type Package (2-pin) Storage temperature Marking Symbol: 4D Note) * : Maximum ambient temperature during operation I Electrical Characteristics Ta = 25°C Parameter Reverse current (DC) Forward voltage (DC) Diode capacitance Forward dynamic resistance* Symbol IR VF CD rf VR = 33 V IF = 100 mA VR = 6 V, f = 1 MHz IF = 2 mA, f = 100 MHz Conditions Min Typ 0.01 0.96 0.9 1.0 Max 100 1.1 1.2 1.3 Unit nA V pF Ω Note) 1 Rated input/output frequency: 100 MHz 2 * : rf measuring instrument: YHP MODEL 4191A RF IMPEDANCE ANALYZER 0.16 − 0.06 + 0.1 0.3 − 0.05 + 0.1 1.25 ± 0.1 1 MA2Z081 IF  V F 102 102 Band Switching Diodes IR  V R 102 IR  T a 10 Ta = 85°C 10 Forward current IF (mA) Reverse current IR (nA) 10 Reverse current IR (nA) 1 1 VR = 25 V 10 V 1 10−1 10−1 10−1 10−2 Ta = 85°C 25°C 0 0.2 0.4 0.6 −25°C 0.8 1.0 25°C 10−2 ...