MA2Z077

Band Switching Diodes MA2Z077 Silicon epitaxial planar type Unit : mm For band switching I Features Low forward dynamic resistance rf Less voltage dependence of diode capacitance CD S-mini type package, allowing downsizing of equipment and automatic insertion through the taping package INDICATES CATHODE 0.4 ± 0.15 1 2 0.4 ± 0.15 1.7 ± 0.1 2.5 ± 0.2 Parameter Reverse voltage (DC) Forward current (DC) Operating ambient temperature* Storage temperature Symbol VR IF Topr Tstg Rating 35 100 −25 to +85 −55 to +150 Unit V mA °C °C 0.9 ± 0.1 0 to 0.05 1 : Anode 2 :Cathode S-Mini Type Package (2-pin) Note) * : Maximum ambient temperature during operation Marking Symbol: 4B I Electrical Characteristics Ta = 25°C Parameter Reverse current (DC) Forward voltage (DC) Diode capacitance Forward dynamic resistance* Symbol IR VF CD rf VR = 33 V IF = 100 mA VR = 6 V, f = 1 MHz IF = 2 mA, f = 100 MHz Conditions Min Typ 0.01 0.92 0.9 0.65 Max 100 1 1.2 0.85 Unit nA V pF Ω Note) 1 Rated input/output frequency: 100 MHz 2 * : rf measuring instrument: YHP MODEL 4191A RF IMPEDANCE ANALYZER 0.16 − 0.06 + 0.1 I Absolute Maximum Ratings Ta = 25°C 0.3 − 0.05 + 0.1 1.25 ± 0.1 1 MA2Z077 IF  V F 103 Ta = 25°C 10 Band Switching Diodes CD  VR f = 1 MHz Ta = 25°C IR  T a 102 VR = 33 V 5 3 2 10 1 Reverse current IR (nA) 0 4 8 12 16 20 24 28 32 36 40 102 Diode capacitance CD (pF) Forward current IF (mA) 10 1 0.5 0.3 0.2 1 10−1 10−1 0.1 10−2 0 0.2 0.4 0.6 0...