MA2X707

Schottky Barrier Diodes (SBD) MA2X707 Silicon epitaxial planar type For UHF mixer I Features Small forward voltage VF Optimum for UHF mixer because of its large conversion gain (GC) Mini type package, allowing downsizing of equipment and automatic insertion through the taping package 1.6 − 0.1 + 0.2 INDICATES CATHODE Unit : mm 1 2 2.7 − 0.1 3.3 ± 0.2 *(3.8 ± 0.2) + 0.2 5° 0.3 0 to 0.05 Parameter Reverse voltage (DC) Forward voltage Junction temperature Storage temperature Symbol VR VF Tj Tstg Rating 5 0.5 125 −55 to +125 Unit V V °C °C 5° *( ): WL type 1 : Anode 2 : Cathode Mini Type Package (2-pin) Marking Symbol: 5B I Electrical Characteristics Ta = 25°C Parameter Forward current (DC) Reverse current (DC) Forward voltage (DC) Reverse break down voltage (DC) Terminal capacitance Conversion gain*1,2 Static breakdown strength Symbol IF IR VF V(BR)R Ct GC VF = 0.5 V VR = 5 V IF = 2 mA IR = 1 mA VR = 0.5 V, f = 1 MHz RF = 890 MHz, LO = 935 MHz, IF = 45 MHz C = 100 pF, Breakdown judgment point IR ≥ 35 µA 5 0.65 −7 100 0.85 −5 200 1.05 0.25 Conditions Min 35 Typ Max 100 35 Unit mA µA V V pF dB V Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment 2. Noise figure is 8.5 dB. 3. Rated input/output frequency: 935 MHz 4. *1 : Judgement is to be made per each chip lot. Sampling of LTPD = 20% and n = 11 is guaran...