MA2SD24

Schottky Barrier Diodes (SBD) MA2SD24 Silicon epitaxial planar type Unit: mm For super high speed switching 0.80+0.05 –0.03 0.80±0.05 0.60+0.05 –0.03 0.12+0.05 –0.02 (0.80) 2 0.30±0.05 5˚ Forward current (Average) IF(AV) = 200 mA rectification is possible Small reverse current IR (0.60) ■ Features 1 (0.60) 0.01±0.01 ■ Absolute Maximum Ratings Ta = 25°C Parameter Reverse voltage Repetitive peak reverse voltage Peak forward current Forward current (Average) Non-repetitive peak forward surge current * Junction temperature Storage temperature Symbol VR VRRM IFM IF(AV) IFSM Tj Tstg Rating 20 20 300 200 1 125 −55 to +125 Unit V 0+0 –0.05 5˚ 0.01±0.01 V mA mA A °C °C 1: Anode 2: Cathode EIAJ: SC-79 SSMini2-F1 Package Marking Symbol: 5L Note) *: The peak-to-peak value in one cycle of 50 Hz sine wave (non-repetitive) ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Forward voltage Reverse current Terminal capacitance Reverse recovery time * Symbol VF IR Ct trr IF = 200 mA VR = 10 V VR = 0 V, f = 1 MHz IF = IR = 100 mA Irr = 10 mA, RL = 100 Ω Conditions Min Typ 0.50 0.1 25 3 Max 0.58 1.0 Unit V µA pF ns Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes. 2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment. 3. Absolute frequency of input and output is 250 MHz. 4. *...