MA2S377

Variable Capacitance Diodes MA2S377 Silicon epitaxial planar type Unit : mm For VCO and TCXO I Features SS-mini type package, allowing downsizing of equipment and automatic insertion through the taping package 0.15 min. 0.15 min. 0.27 − 0.02 0.8 ± 0.1 + 0.05 1.3 ± 0.1 I Absolute Maximum Ratings Ta = 25°C Parameter Reverse voltage (DC) Forward current (DC) Junction temperature Storage temperature Symbol VR IF Tj Tstg Rating 12 20 150 −55 to +150 Unit 0.7 ± 0.1 1.7 ± 0.1 V mA °C °C 1 : Anode 2 : Cathode SS-Mini Type Package (2-pin) Marking Symbol: 7 I Electrical Characteristics Ta = 25°C ± 3°C Parameter Reverse current (DC) Diode capacitance Symbol IR CD(2V) CD(10V) Capacitance ratio Series resistance* CD(2V)/CD(10V) rD VR = 1 V, f = 470 MHz VR = 12 V VR = 2 V, f = 1 MHz VR = 10 V, f = 1 MHz 2.80 1.10 2.20 0.40 Conditions Min Typ Max 10 3.40 1.50 2.80 0.60 Unit nA pF pF  Ω Note) 1 Rated input/output frequency: 470 MHz 2 * : rf measuring instrument: YHP MODEL 4191A RF IMPEDANCE ANALYZER 0 to 0.1 0.13 − 0.02 + 0.05 0.27 − 0.02 + 0.05 1 MA2S377 CD  VR 10 8 7 6 5 4 3 f = 1 MHz Ta = 25°C 120 25°C Variable Capacitance Diodes IF  V F 1.030 CD  Ta f = 1 MHz 100 Diode capacitance CD (pF) Forward current IF (mA) 1.020 Ta = 60°C VR = 2 V CD(Ta) CD(Ta = 25° ) − 40°C 50 10 V 1.010 2 1.000 0.990 1 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 0 0.4 0.9 1.4 0.986 0 20 40 60 80 100 Reverse voltage VR (V) Forward voltage VF (V) Ambient temperat...