MA2S376

Variable Capacitance Diodes MA2S376 Silicon epitaxial planar type Unit : mm For VCO of a UHF radio I Features Small series resistance rD SS-mini type package, allowing downsizing of equipment and automatic insertion through the taping package 0.15 min. 0.15 min. 0.27 − 0.02 0.8 ± 0.1 + 0.05 1.3 ± 0.1 1.7 ± 0.1 I Absolute Maximum Ratings Ta = 25°C Reverse voltage (DC) Junction temperature Storage temperature VR Tj Tstg 6 150 −55 to +150 V °C °C 0.7 ± 0.1 Parameter Symbol Rating Unit 1 : Anode 2 : Cathode SS-Mini Type Package (2-pin) Marking Symbol: H I Electrical Characteristics Ta = 25°C Parameter Reverse current (DC) Diode capacitance Series resistance* Symbol IR CD(1V) CD(3V) rD VR = 6 V VR = 1 V, f = 1 MHz VR = 3 V, f = 1 MHz CD = 9 pF, f = 470 MHz 14.00 6.80 Conditions Min Typ Max 10 16.00 8.90 0.3 Unit nA pF pF Ω Note) 1 Rated input/output frequency: 470 MHz 2 * : rf measuring instrument: YHP MODEL 4191A RF IMPEDANCE ANALYZER 0 to 0.1 0.13 − 0.02 + 0.05 0.27 − 0.02 + 0.05 1 MA2S376 CD  VR 100 f = 1 MHz Ta = 25°C 120 Variable Capacitance Diodes IF  V F Ta = 25°C 1.04 CD  Ta f = 1 MHz VR = 1 V 3V 50 100 1.03 Diode capacitance CD (pF) 30 20 Forward current IF (mA) 10 60 CD(Ta) CD(Ta = 25°C) 0 0.2 0.4 0.6 0.8 1.0 1.2 80 1.02 1.01 5 3 2 40 1.00 20 0.99 1 0 4 8 12 16 20 24 28 32 36 40 0 0.98 0 20 40 60 80 100 Reverse voltage VR (V) Forward voltage VF (V) Ambient temperature Ta (°C) IR  T a 100 VR = 6 V Reverse...