Variable Capacitance Diodes
MA2S304
Silicon epitaxial planar type
Unit : mm
For VCO
0.15 min. 0.15 min.
• Good linearity and large capacitance-ratio in CD VR relation • Small series resistance rD • SS-mini type package, allowing downsizing of equipment and automatic insertion through the taping package
0.27 − 0.02
0.8 ± 0.1
+ 0.05
I Features
1.3 ± 0.1 1.7 ± 0.1
Parameter Reverse voltage (DC) Junction temperature Storage temperature
Symbol VR Tj Tstg
Rating 30 150 −55 to +150
Unit V.
Silicon epitaxial planar type
Variable Capacitance Diodes
MA2S304
Silicon epitaxial planar type
Unit : mm
For VCO
0.15 min. 0.15 min.
• Good linearity and large capacitance-ratio in CD VR relation • Small series resistance rD • SS-mini type package, allowing downsizing of equipment and automatic insertion through the taping package
0.27 − 0.02
0.8 ± 0.1
+ 0.05
I Features
1.3 ± 0.1 1.7 ± 0.1
Parameter Reverse voltage (DC) Junction temperature Storage temperature
Symbol VR Tj Tstg
Rating 30 150 −55 to +150
Unit V °C °C
0.7 ± 0.1
1 : Anode 2 : Cathode SS-Mini Type Package (2-pin)
Marking Symbol: K
I Electrical Characteristics Ta = 25°C
Parameter Reverse current (DC) Diode capacitance Symbol IR CD(1V) CD(4V) Capacitance ratio Series resistance* CD(1V)/CD(4V) rD VR = 4 V, f = 100 MHz VR = 28 V VR = 1 V, f = 1 MHz VR = 4 V, f = 1 MHz 24.8 6.0 3.0 1.0 Conditions Min Typ Max 10 29.8 8.3 Unit nA pF pF Ω
Note) 1 Rated input/output frequency: 100 MHz 2 * : rf measuring instrument: YHP MODEL 4191A RF IMPEDANCE ANALYZER
0 to 0.1
0.13 − 0.02
+ 0.05
I Absolute Maximum Ratings Ta = 25°C
0.27 − 0.02
+ 0.05
1
MA2S304
CD VR
100 f = 1 MHz Ta = 25°C
120 25°C Ta = 60°C − 40°C
Variable Capacitance Diodes
IF V F
1.04
CD Ta
f = 1 MHz VR = 4 V 1V
50
100
1.03
Diode capacitance CD (pF)
30 20
Forward current IF (mA)
10
60
CD(Ta) CD(Ta = 25°C)
0 0.2 0.4 0.6 0.8 1.0 1.2
80
1.02
1.01
5 3 2
40
1.00
20
0.99
1
0
0
4
8 12 16 20 24 28 32 36 40
0.98
0
20
40
60
80
100
Reverse v.