MA2Q735

Schottky Barrier Diodes (SBD) MA2Q735 Silicon epitaxial planar type Unit : mm For switching circuits 4.4 ± 0.3 0 to 0.05 I Features Forward current (average) IF(AV): 1 A type Reverse voltage (DC value) VR: 30 V Allowing automatic insertion with the emboss taping 2.5 ± 0.3 2 1 0.25 − 0.05 Parameter Reverse voltage (DC) Repetitive peak reverse voltage Average forward current*1 Non-repetitive peak forward surge current*2 Junction temperature Storage temperature Symbol VR VRRM IF(AV) IFSM Tj Tstg Rating 30 30 1 30 −40 to +125 −40 to +125 Unit V V A A °C °C 1.2 ± 0.4 5.0 − 0.1 + 0.4 1.2 ± 0.4 1 : Anode 2 : Cathode New Mini Power Type Package (2-pin) Marking Symbol: PA Note) *1 : With a printed-circuit board (copper foil area 2 mm × 2 mm or more on both cathode and anode sides) *2 : The peak-to-peak value in one cycle of 50 Hz sine-wave (non-repetitive) I Electrical Characteristics Ta = 25°C Parameter Reverse current (DC) Forward voltage (DC) Terminal capacitance Reverse recovery time* Symbol IR VF Ct trr VR = 30 V IF = 1 A VR = 10 V, f = 1 MHz IF = IR = 100 mA Irr = 10 mA, RL = 100 Ω 50 30 Conditions Min Typ Max 1 0.5 Unit mA V pF ns Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment 2. Rated input/output frequency: 20 MHz 3. * : trr measuring instrument Bias Application Unit N-50BU tr 10% Input Pulse tp t IF ...