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MA2J116 Datasheet

Part Number MA2J116
Manufacturers Panasonic
Logo Panasonic
Description Switching Diodes
Datasheet MA2J116 DatasheetMA2J116 Datasheet (PDF)

Switching Diodes MA2J116 Silicon epitaxial planar type Unit : mm For general purpose I Features • Small S-mini type package, allowing high-density mounting • Soft recovery characteristic (trr = 100 ns) K A 0.625 2 1 Parameter Reverse voltage (DC) Peak reverse voltage Average forward current Peak forward current Non-repetitive peak forward surge current* Junction temperature Storage temperature Noe) * : t=1s Symbol VR VRM IF(AV) IFM IFSM Tj Tstg Rating 40 40 100 225 500 150 −55 to +150 .

  MA2J116   MA2J116






Part Number MA2J115
Manufacturers Panasonic
Logo Panasonic
Description Rectifier Diodes
Datasheet MA2J116 DatasheetMA2J115 Datasheet (PDF)

Rectifier Diodes MA2J115 Silicon epitaxial planar type Unit : mm For small power current rectification I Features • Small S-mini type package, allowing high-density mounting • High reverse voltage VR 0.5 ± 0.1 K A 0.625 2 0.16 − 0.06 + 0.1 1 1.25 ± 0.1 0.7 ± 0.1 I Absolute Maximum Ratings Ta = 25°C Parameter Reverse voltage (DC) Peak reverse voltage Output current Repetitive peak forward current Non-repetitive peak forward surge current* Junction temperature Storage temperature Note) * : t.

  MA2J116   MA2J116







Part Number MA2J114
Manufacturers Panasonic
Logo Panasonic
Description Rectifier Diodes
Datasheet MA2J116 DatasheetMA2J114 Datasheet (PDF)

Rectifier Diodes MA2J114 Silicon epitaxial planar type Unit : mm For small power rectification I Features 0.5 ± 0.1 K A 0.625 2 0.16 − 0.06 + 0.1 1 I Absolute Maximum Ratings Ta = 25°C Parameter Reverse voltage (DC) Peak reverse voltage Output current Repetitive peak forward current Non-repetitive peak forward surge current* Junction temperature Storage temperature Note) * : t = l s Symbol VR VRM IO IFRM IFSM Tj Tstg Rating 150 150 200 600 Unit V V mA mA 1.25 ± 0.1 0.7 ± 0.1 0.4 ± 0.1 .

  MA2J116   MA2J116







Part Number MA2J113
Manufacturers Panasonic
Logo Panasonic
Description Switching Diodes
Datasheet MA2J116 DatasheetMA2J113 Datasheet (PDF)

Switching Diodes MA2J113 Silicon epitaxial planar type Unit : mm For switching circuits K A 0.625 I Features • Small S-mini type package, allowing high-density mounting • Ensuring the average forward current capacity IF(AV) = 200 mA • High breakdown voltage (VR = 80 V) 0.5 ± 0.1 2 0.16 − 0.06 + 0.1 1 Parameter Reverse voltage (DC) Peak reverse voltage Forward current (DC) Peak forward current Non-repetitive peak forward surge current* Junction temperature Storage temperature Noe) * : t=1s .

  MA2J116   MA2J116







Part Number MA2J112
Manufacturers Panasonic
Logo Panasonic
Description Switching Diodes
Datasheet MA2J116 DatasheetMA2J112 Datasheet (PDF)

Switching Diodes MA2J112 Silicon epitaxial planar type Unit : mm For switching circuits K A 0.625 • Small S-mini type package, allowing high-density mounting • Ensuring the average forward current capacity IF(AV) = 200 mA 2 1 Parameter Reverse voltage (DC) Peak reverse voltage Average forward current *1 Peak forward current Non-repetitive peak forward surge current*2 Junction temperature Storage temperature Symbol VR VRM IF(AV) IFM IFSM Tj Tstg Rating 40 40 200 600 1 150 −55 to +150 Un.

  MA2J116   MA2J116







Switching Diodes

Switching Diodes MA2J116 Silicon epitaxial planar type Unit : mm For general purpose I Features • Small S-mini type package, allowing high-density mounting • Soft recovery characteristic (trr = 100 ns) K A 0.625 2 1 Parameter Reverse voltage (DC) Peak reverse voltage Average forward current Peak forward current Non-repetitive peak forward surge current* Junction temperature Storage temperature Noe) * : t=1s Symbol VR VRM IF(AV) IFM IFSM Tj Tstg Rating 40 40 100 225 500 150 −55 to +150 Unit V V mA mA mA °C °C 0.4 ± 0.1 1.7 ± 0.1 2.5 ± 0.2 0.4 ± 0.1 1 : Anode 2 : Cathode S-Mini Type Package (2-pin) Marking Symbol: 1H I Electrical Characteristics Ta = 25°C Parameter Reverse current (DC) Symbol IR1 IR2 IR3 Forward voltage (DC) Reverse voltage (DC) Terminal capacitance Forward dynamic resistance*1 Reverse recovery time*2 VF VR Ct rf trr VR = 15 V VR = 40 V VR = 35 V, Ta = 100°C IF = 100 mA IR = 100 µA VR = 6 V, f = 1 MHz IF = 3 mA, f = 30 MHz IF = 10 mA, VR = 6 V Irr = 0.1 · IR, RL = 100 Ω 35 1.0 2.0 3.6 100 Conditions Min Typ Max 5 10 100 1.2 Unit nA nA µA V V pF Ω ns Note) 1. Rated input/output frequency: 100 MHz 2. *1 : YHP 4191A PF IMPEDANCE ANALYZER *2 : trr measuring circuit Bias Application Unit N-50BU tr 10% Input Pulse tp t IF trr t Irr = 0.1 · IR IF = 10 mA VR = 6 V RL = 100 Ω Output Pulse A VR Pulse Generator (PG-10N) Rs = 50 Ω W.F.Analyzer (SAS-8130) Ri = 50 Ω 90% tp = 2 µs tr = 0.35 ns δ = 0.05 0.7 ± 0.1 I Absolute Maximum Ratings Ta = 25°C 0.16 − .


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