Rectifier Diodes
MA2J114
Silicon epitaxial planar type
Unit : mm
For small power rectification I Features
0.5 ± 0.1
K...
Rectifier Diodes
MA2J114
Silicon epitaxial planar type
Unit : mm
For small power rectification I Features
0.5 ± 0.1
K
A 0.625
2 0.16 − 0.06
+ 0.1
1
I Absolute Maximum Ratings Ta = 25°C
Parameter Reverse
voltage (DC) Peak reverse
voltage Output current Repetitive peak forward current Non-repetitive peak forward surge current* Junction temperature Storage temperature Note) * : t = l s Symbol VR VRM IO IFRM IFSM Tj Tstg Rating 150 150 200 600 Unit V V mA mA
1.25 ± 0.1 0.7 ± 0.1
0.4 ± 0.1
1.7 ± 0.1 2.5 ± 0.2
0.4 ± 0.1
1 150 −55 to +150
A °C °C
1 Anode 2 Cathode S-Mini Type Package (2-pin)
Marking Symbol: 1E
I Electrical Characteristics Ta = 25°C
Parameter Reverse current (DC) Forward
voltage (DC) Terminal capacitance Symbol IR VF Ct VR = 150 V IF = 200 mA VR = 0 V, f = 1 MHz 4.5 Conditions Min Typ Max 200 1.2 Unit nA V pF
Note) Rated input/output frequency: 3 MHz
0.3
Small S-mini type package, allowing high-density mounting High reverse
voltage VR
1
MA2J114
IF V F
1 000 100°C 25°C 100
1.6 1.4
Rectifier Diodes
VF Ta
100
IR V R
Ta = 150°C 100°C
10
Forward current IF (mA)
Forward
voltage VF (V)
Ta = 150°C 10
−20°C
1.2 1.0 0.8 0.6 0.4 0.2 10 mA 3 mA
Reverse current IR (nA)
IF = 200 mA
1
1
0.1 25°C 0.01
0.1
0.01
0
0.2
0.4
0.6
0.8
1.0
1.2
0 −40
0.001
0 40 80 120 160 200
0
40
80
120
160
200
240
Forward
voltage VF (V)
Ambient temperature Ta (°C)
Reverse
voltage VR (V)
IR Ta
100 VR = 150 V
3
Ct VR
1 000 f = 1 MHz Ta = ...