MA2J111

Switching Diodes MA2J111 Silicon epitaxial planar type Unit : mm For switching circuits K A 0.16 − 0.06 + 0.1 Small S-mini type package, allowing high-density mounting Short reverse recovery time trr Small terminal capacitance, Ct High breakdown voltage (VR = 80 V) 0.625 I Features 0.5 ± 0.1 2 1 1.25 ± 0.1 0.3 0.4 ± 0.1 1.7 ± 0.1 2.5 ± 0.2 0.4 ± 0.1 I Absolute Maximum Ratings Ta = 25°C Parameter Reverse voltage (DC) Peak reverse voltage Average forward current Peak forward current Non-repetitive peak forward surge current* Junction temperature Storage temperature Note) * : t = 1 s Symbol VR VRM IF(AV) IFM IFSM Tj Tstg Rating 80 80 100 225 500 150 −55 to +150 Unit V V mA mA mA °C °C 1 : Anode 2 : Cathode S-Mini Type Package (2-pin) Marking Symbol: 1B I Electrical Characteristics Ta = 25°C Parameter Reverse current (DC) Forward voltage (DC) Reverse voltage (DC) Terminal capacitance Reverse recovery time* Symbol IR VF VR Ct trr VR = 75 V IF = 100 mA IR = 100 µA VR = 0 V, f = 1 MHz IF = 10 mA, VR = 6 V Irr = 0.1 · IR, RL = 100 Ω 80 0.6 1.2 3 0.95 Conditions Min Typ Max 100 1.2 Unit nA V V pF ns Note) 1. Rated input/output frequency: 100 MHz 2. * : trr measuring circuit Bias Application Unit N-50BU tr 10% Input Pulse tp t IF trr t Irr = 0.1 · IR IF = 10 mA VR = 6 V RL = 100 Ω Output Pulse A VR Pulse Generator (PG-10N) Rs = 50 Ω W.F.Analyzer (SAS-8130) Ri = 50 Ω 90% tp = 2 µs tr = 0.35 ns δ = 0.05 0.7±0.1 1 MA2J111 IF  V F 1 000 100 Switching Diodes IR ...