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MA2HD09 Datasheet

Part Number MA2HD09
Manufacturers Panasonic
Logo Panasonic
Description Schottky Barrier Diodes (SBD)
Datasheet MA2HD09 DatasheetMA2HD09 Datasheet (PDF)

Schottky Barrier Diodes (SBD) MA2HD09 Silicon epitaxial planar type Unit : mm For high-frequency rectification 3.2 ± 0.3 0 to 0.05 • Small and thin Half New Mini-power package • Allowing to rectify under (IF(AV) = 1 A) condition • Low VF (forward voltage) type: VF < 0.4 V(at IF = 1 A) 1.9 ± 0.3 2 1 I Absolute Maximum Ratings Ta = 25°C Parameter Reverse voltage (DC) Repetitive peak reverse voltage Average forward current Non-repetitive peak forward surge current* Junction temperature Stora.

  MA2HD09   MA2HD09






Part Number MA2HD08
Manufacturers Panasonic
Logo Panasonic
Description Schottky Barrier Diodes (SBD)
Datasheet MA2HD09 DatasheetMA2HD08 Datasheet (PDF)

Schottky Barrier Diodes (SBD) MA2HD08 Silicon epitaxial planar type Unit : mm For high-frequency rectification 3.2 ± 0.3 0 to 0.05 • Small and thin Half New Mini-power package • Allowing to rectify under (IF(AV) = 1 A) condition 1.9 ± 0.3 2 1 I Absolute Maximum Ratings Ta = 25°C Parameter Reverse voltage (DC) Repetitive peak reverse voltage Average forward current Non-repetitive peak forward surge current* Junction temperature Storage temperature Symbol VR VRRM IF(AV) IFSM Tj Tstg Rating .

  MA2HD09   MA2HD09







Part Number MA2HD07
Manufacturers Panasonic
Logo Panasonic
Description Schottky Barrier Diodes (SBD)
Datasheet MA2HD09 DatasheetMA2HD07 Datasheet (PDF)

Schottky Barrier Diodes (SBD) MA2HD07 Silicon epitaxial planar type Unit: mm 1.9±0.1 2 1.85±0.2 0.9±0.2 0.9±0.2 8° For high frequency rectification I Features • IF(AV) = 1 A rectification is possible • Half New Mini-power package 3.2±0.1 I Absolute Maximum Ratings Ta = 25°C Parameter Reverse voltage (DC) Repetitive peak reverse-voltage Average forward current Non-repetitive peak forwardsurge-current * Junction temperature Storage temperature Symbol VR VRRM IF(AV) IFSM Tj Tstg Rating 30 30 1 2.

  MA2HD09   MA2HD09







Schottky Barrier Diodes (SBD)

Schottky Barrier Diodes (SBD) MA2HD09 Silicon epitaxial planar type Unit : mm For high-frequency rectification 3.2 ± 0.3 0 to 0.05 • Small and thin Half New Mini-power package • Allowing to rectify under (IF(AV) = 1 A) condition • Low VF (forward voltage) type: VF < 0.4 V(at IF = 1 A) 1.9 ± 0.3 2 1 I Absolute Maximum Ratings Ta = 25°C Parameter Reverse voltage (DC) Repetitive peak reverse voltage Average forward current Non-repetitive peak forward surge current* Junction temperature Storage temperature Symbol VR VRRM IF(AV) IFSM Tj Tstg Rating 30 30 1 25 125 −40 to +125 Unit V V A A °C °C 0.25 − 0.05 0.9 ± 0.4 3.8 ± 0.2 0.9 ± 0.4 1 : Anode 2 : Cathode Half New Mini-Power Type Package Marking Symbol: PR Note) * : The peak-to-peak value in one cycle of 50 Hz sine-wave (non-repetitive) I Electrical Characteristics Ta = 25°C ± 3°C Parameter Reverse current (DC) Forward voltage (DC) Terminal capacitance Reverse recovery time* Symbol IR VF Ct trr VR = 30 V IF = 1 A VR = 10 V, f = 1 MHz IF = IR = 100 mA Irr = 0.1 · IR, RL = 100 Ω 50 15 Conditions Min Typ Max 3 0.40 Unit mA V pF ns Note) 1. Rated input/output frequency: 20 MHz 2. * : trr measuring instrument Bias Application Unit N-50BU tr 10% Input Pulse tp t IF trr t Irr = 0.1 · IR IF = 100 mA IR = 100 mA RL = 100 Ω Output Pulse A VR Pulse Generator (PG-10N) Rs = 50 Ω W.F.Analyzer (SAS-8130) Ri = 50 Ω 90% tp = 2 µs tr = 0.35 ns δ = 0.05 1.85 ± 0.3 + 0.1 1.0 ± 0.2 I Features 1 MA2HD09 IF  V F 10 1 10−1 Ta = 1.


2005-04-27 : CXA1019S    VK648    VK648    VK648    RC242001    M39012    BF178    IDT2309    IDT2309A    IDT23S05   


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