MA2H736

Schottky Barrier Diodes (SBD) MA2H736 Silicon epitaxial planar type Unit : mm For switching circuits 3.2 ± 0.1 0 to 0.05 Small and thin Half New Mini-power package Allowing to rectify under (IF(AV) = 1 A) condition 1.9 ± 0.1 2 1 I Absolute Maximum Ratings Ta = 25°C Reverse voltage (DC) Repetitive peak reverse voltage Average forward current Non-repetitive peak forward surge current* Junction temperature Storage temperature VR VRRM IF(AV) IFSM Tj Tstg 40 40 1 30 125 −40 to +125 V V A A °C °C 3.8 ± 0.2 0.25 − 0.05 1.85 ± 0.2 + 0.1 Parameter Symbol Rating Unit 0.9 ± 0.2 0.9 ± 0.2 1 : Anode 2 : Cathode Half New Mini-Power Package (2-pin) Marking Symbol: B Note) * : The peak-to-peak value in one cycle of 50 Hz sine-wave (non-repetitive) I Electrical Characteristics Ta = 25°C Parameter Reverse current (DC) Forward voltage (DC) Terminal capacitance Reverse recovery time* Symbol IR VF Ct trr VR = 50 V IF = 1 A VR = 10 V, f = 1 MHz IF = IR = 100 mA Irr = 0.1 · IR, RL = 100 Ω 50 30 Conditions Min Typ Max 2 0.55 Unit mA V pF ns Note) 1. Rated input/output frequency: 20 MHz 2. * : trr measuring instrument Bias Application Unit N-50BU tr Input Pulse tp 10% t IF Output Pulse trr t Irr = 0.1 · IR IF = 100 mA IR = 100 mA RL = 100 Ω A VR Pulse Generator (PG-10N) Rs = 50 Ω W.F.Analyzer (SAS-8130) Ri = 50 Ω 90% tp = 2 µs tr = 0.35 ns δ = 0.05 1.0 ± 0.2 I Features 1 MA2H736 IF  V F 1 Schottky Barrier Diodes (SBD) VF  Ta 0.8 0.7 1 75°C 25°C − 20°C 10 Ta = 125°C ...