MA2B001

Trigger Devices MA2B001 Silicon planar type trigger device Unit : mm Thyristor TRIAC trigger circuit φ 0.56 max. Satisfactory symmetry of VBO Large VO and small IBO I Absolute Maximum Ratings Ta = 25°C Parameter Average total power dissipation Peak current*1 Operating ambient temperature*2 Symbol P(AV) IPM Topr Tstg Rating 150 2.0 100 −55 to +125 Unit mW A °C °C 4.5 max. 24 min. I Features φ 1.95 max. 24 min. Storage temperature Note) *1 : Ta < 50°C, t = 10 µs, repetitive frequency 60 Hz *2 : Maximum ambient temperature during operation DO-35 Package I Electrical Characteristics Ta = 25°C ± 3°C Parameter Breakover current Breakover voltage*1 Output voltage*1 Symbol IBO VBO VO T.C.(VBO) ∆VBO *2 : Symmetry of VBO V = VBO I = IBO 28 4.0 7.0 0.1 3.5 Conditions Min Typ Max 50 36 Unit µA V V %/°C V Temperature coefficient of breakover voltage Breakover voltage deviation*2 Note) 1. Rated input/output frequency: 100 MHz 2. *1 : Measurement of VBO and VO VBO 30 kΩ 70 kΩ VO 100 Vrms 0.068 µF 20 Ω VBO' VBO Amp. Color indication (Green) 1 MA2B001 VBO  Ta 50 45 16 14 Trigger Devices VO  Ta 1 000 800 Ta = 25°C IBO  VBO Breakover voltage VBO (V) Breakover current IBO (µA) 40 35 30 25 20 15 10 5 0 0 20 40 60 80 100 120 140 160 2 0 Output voltage VO (V) 12 10 8 6 4 600 400 200 0 200 400 600 800 1 000 0 20 40 60 80 100 120 140 160 40 30 20 10 0 10 20 30 40 Ambient temperature Ta (°C) Ambient temperature Ta (°C) Breakover voltage VBO (V) VO  RL 14 ...