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Variable Capacitance Diodes
MA27V07
Silicon epitaxial planar type
Unit: mm
For VCO s Features
• G...
www.DataSheet4U.com
Variable Capacitance Diodes
MA27V07
Silicon epitaxial planar type
Unit: mm
For VCO s Features
Good linearity and large capacitance-ratio in CD − VR relation High frequency type by this low capacitance SSS-Mini type package, allowing downsizing of equipment and automatic insertion through the taping package
0.27+0.05 –0.02 2
0.10+0.05 –0.02
1.00±0.05
1.40±0.05
1 0.60±0.05 5°
s Absolute Maximum Ratings Ta = 25°C
Parameter Reverse
voltage (DC) Junction temperature Storage temperature Symbol VR Tj Tstg Rating 6 125 −55 to +125 Unit V °C °C
0.15 min.
5°
0 to 0.01
1: Anode 2: Cathode SSSMini2-F1 Package
Marking Symbol: 7
s Electrical Characteristics Ta = 25°C ± 3°C
Parameter Reverse current (DC) Diode capacitance Symbol IR CD(1V) CD(3V) Capacitance ratio Series resistance * CD(1V)/CD(3V) rD VR = 3 V, f = 470 MHz VR = 5 V VR = 1 V, f = 1 MHz VR = 3 V, f = 1 MHz 2.88 1.49 1.84 Conditions Min Typ Max 10 3.12 1.62 2.02 0.35 Ω Unit nA pF
Note) 1. Rated input/output frequency: 470 MHz 2. * : Measuring instrument; YHP MODEL 4191A RF IMPEDANCE ANALYZER
0.15 max.
0.52±0.03
0.15 min.
Publication date: April 2002
SKD00065AED
1
MA27V07
I F VF
180 160 25°C
CD VR
10 f = 1 MHz Ta = 25°C
Ta = 60°C 100 80 −40°C 60 40 20 0
1
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0.1 0 2 4 6 8 10 12
CD (Ta) CD (Ta = 25°C)
120
Diode capacitance CD (pF)
Forward current IF (mA)
140
CD Ta 1.052 f = 1 MHz 1.048 1.044 1.040 1.036 1.032 VR = 1 V 1.028 1.024 ...