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MA27V07

Panasonic Semiconductor

Silicon epitaxial planar type

www.DataSheet4U.com Variable Capacitance Diodes MA27V07 Silicon epitaxial planar type Unit: mm For VCO s Features • G...


Panasonic Semiconductor

MA27V07

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www.DataSheet4U.com Variable Capacitance Diodes MA27V07 Silicon epitaxial planar type Unit: mm For VCO s Features Good linearity and large capacitance-ratio in CD − VR relation High frequency type by this low capacitance SSS-Mini type package, allowing downsizing of equipment and automatic insertion through the taping package 0.27+0.05 –0.02 2 0.10+0.05 –0.02 1.00±0.05 1.40±0.05 1 0.60±0.05 5° s Absolute Maximum Ratings Ta = 25°C Parameter Reverse voltage (DC) Junction temperature Storage temperature Symbol VR Tj Tstg Rating 6 125 −55 to +125 Unit V °C °C 0.15 min. 5° 0 to 0.01 1: Anode 2: Cathode SSSMini2-F1 Package Marking Symbol: 7 s Electrical Characteristics Ta = 25°C ± 3°C Parameter Reverse current (DC) Diode capacitance Symbol IR CD(1V) CD(3V) Capacitance ratio Series resistance * CD(1V)/CD(3V) rD VR = 3 V, f = 470 MHz VR = 5 V VR = 1 V, f = 1 MHz VR = 3 V, f = 1 MHz 2.88 1.49 1.84 Conditions Min Typ Max 10 3.12 1.62 2.02 0.35  Ω Unit nA pF Note) 1. Rated input/output frequency: 470 MHz 2. * : Measuring instrument; YHP MODEL 4191A RF IMPEDANCE ANALYZER 0.15 max. 0.52±0.03 0.15 min. Publication date: April 2002 SKD00065AED 1 MA27V07 I F  VF 180 160 25°C CD  VR 10 f = 1 MHz Ta = 25°C Ta = 60°C 100 80 −40°C 60 40 20 0 1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0.1 0 2 4 6 8 10 12 CD (Ta) CD (Ta = 25°C) 120 Diode capacitance CD (pF) Forward current IF (mA) 140 CD  Ta 1.052 f = 1 MHz 1.048 1.044 1.040 1.036 1.032 VR = 1 V 1.028 1.024 ...




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