MA27111

Switching Diodes MA27111 Silicon epitaxial planar type Unit: mm For high-speed switching circuits ■ Features High-density mounting is possible Short reverse recovery time trr Small terminal capacitance Ct 0.27+0.05 –0.02 2 1.00±0.05 1.40±0.05 0.13+0.05 –0.02 1 0.60±0.05 0.15 min. ■ Absolute Maximum Ratings Ta = 25°C Parameter Reverse voltage Maximum peak reverse voltage Forward current Peak forward current Non-repetitive peak forward surge current * Junction temperature Storage temperature Note) *: t = 1 s Symbol VR VRM IF IFM IFSM Tj Tstg Rating 80 80 100 225 500 150 −55 to +150 Unit V V mA mA mA °C °C 5° 5° 0 to 0.01 1: Anode 2: Cathode SSSMini2-F2 Package Marking Symbol: S ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Forward voltage Reverse voltage Reverse current Terminal capacitance Reverse recovery time * Symbol VF VR IR Ct trr IR = 100 µA VR = 75 V VR = 0 V, f = 1 MHz IF = 10 mA, VR = 6 V Irr = 0.1 IR , RL = 100 Ω 0.6 Conditions IF = 100 mA 80 100 2.0 3 nA pF ns Min Typ 0.95 Max 1.20 Unit V Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes. 2. Absolute frequency of input and output is 10 MHz. 3. *: trr measurement circuit Bias Application Unit N-50BU tr 10% Input Pulse tp t IF trr t Irr = 0.1 IR IF = 10 mA VR = 6 V RL = 100 Ω Output Pulse A VR Pulse Generator (PG-10N) Rs = 50 Ω Wave Form Analyzer (SAS-8130) Ri = 50 Ω 90% tp = 2 µs tr = 0.35 ns δ = 0.05 0.15 max. 0.52±0.03 0.15 ...