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MA26V12 Datasheet

Part Number MA26V12
Manufacturers Panasonic Semiconductor
Logo Panasonic Semiconductor
Description Silicon epitaxial planar type
Datasheet MA26V12 DatasheetMA26V12 Datasheet (PDF)

www.DataSheet4U.com Variable Capacitance Diodes MA26V12 Silicon epitaxial planar type Unit: mm For VCO ■ Features • Good linearity and large capacitance-ratio in CD − VR relation • Small series resistance rD • High frequency type by this low capacitance 1.00±0.05 0.60±0.05 3 2 1 0.39+0.01 −0.03 0.15±0.05 0.05±0.03 0.35±0.01 0.25±0.05 0.50±0.05 0.25±0.05 1 ■ Absolute Maximum Ratings Ta = 25°C Parameter Reverse voltage Junction temperature Storage temperature Symbol VR Tj Tstg Rating 8 1.

  MA26V12   MA26V12






Part Number MA26V15
Manufacturers Panasonic Semiconductor
Logo Panasonic Semiconductor
Description Silicon epitaxial planar type
Datasheet MA26V12 DatasheetMA26V15 Datasheet (PDF)

www.DataSheet4U.com Variable Capacitance Diodes MA26V15 Silicon epitaxial planar type Unit: mm For VCO ■ Features • Good linearity and large capacitance-ratio in CD − VR relation • Small series resistance rD • High frequency type by this low capacitance 1 1.00±0.05 0.60±0.05 3 2 0.39+0.01 −0.03 0.25±0.05 0.50±0.05 0.25±0.05 1 ■ Absolute Maximum Ratings Ta = 25°C Parameter Reverse voltage Junction temperature Storage temperature Symbol VR Tj Tstg Rating 6 125 −55 to +125 Unit V °C °C 3 .

  MA26V12   MA26V12







Part Number MA26V14
Manufacturers Panasonic Semiconductor
Logo Panasonic Semiconductor
Description Silicon epitaxial planar type
Datasheet MA26V12 DatasheetMA26V14 Datasheet (PDF)

www.DataSheet4U.com Variable Capacitance Diodes MA26V14 Silicon epitaxial planar type Unit: mm For VCO s Features • Good linearity and large capacitance-ratio in CD − VR relation • Small series resistance rD • High frequency type by this low capacitance 1.00±0.05 1 0.60±0.05 3 2 0.39+0.01 −0.03 0.25±0.05 0.25±0.05 1 s Absolute Maximum Ratings Ta = 25°C Parameter Reverse voltage (DC) Junction temperature Storage temperature Symbol VR Tj Tstg Rating 6 125 −55 to +125 Unit V °C °C 0.50±.

  MA26V12   MA26V12







Part Number MA26V11
Manufacturers Panasonic Semiconductor
Logo Panasonic Semiconductor
Description Silicon epitaxial planar type
Datasheet MA26V12 DatasheetMA26V11 Datasheet (PDF)

www.DataSheet4U.com Variable Capacitance Diodes MA26V11 Silicon epitaxial planar type Unit: mm For VCO ■ Features • Good linearity and large capacitance-ratio in CD − VR relation • Small series resistance rD • High frequency type by this low capacitance 1.00±0.05 0.60±0.05 3 2 1 0.39+0.01 −0.03 0.15±0.05 0.05±0.03 0.35±0.01 0.25±0.05 0.50±0.05 0.25±0.05 1 ■ Absolute Maximum Ratings Ta = 25°C Parameter Reverse voltage Junction temperature Storage temperature Symbol VR Tj Tstg Rating 8 1.

  MA26V12   MA26V12







Silicon epitaxial planar type

www.DataSheet4U.com Variable Capacitance Diodes MA26V12 Silicon epitaxial planar type Unit: mm For VCO ■ Features • Good linearity and large capacitance-ratio in CD − VR relation • Small series resistance rD • High frequency type by this low capacitance 1.00±0.05 0.60±0.05 3 2 1 0.39+0.01 −0.03 0.15±0.05 0.05±0.03 0.35±0.01 0.25±0.05 0.50±0.05 0.25±0.05 1 ■ Absolute Maximum Ratings Ta = 25°C Parameter Reverse voltage Junction temperature Storage temperature Symbol VR Tj Tstg Rating 8 125 −55 to +125 Unit V °C °C 3 0.65±0.01 2 0.05±0.03 1: Anode 2: N.C. 3: Cathode ML3-N2 Package Marking Symbol: 2R ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Reverse current Diode capacitance Symbol IR CD1V CD4V Capacitance ratio Series resistance * Conditions VR = 5 V VR = 1 V, f = 1 MHz VR = 4 V, f = 1 MHz VR = 4 V, f = 470 MHz Min Typ Max 10 Unit nA pF  Ω 3.60 1.97 1.75 3.90 2.14 1.90 0.35 CD1V /CD4V rD Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes. 2. Absolute frequency of input and output is 470 MHz 3. *: Measuring instrument: YHP MODEL 4191A RF IMPEDANCE ANALYZER Publication date: November 2003 SKD00080BED 1 MA26V12 IF  V F 1.2 CD  VR 6 f = 1 MHz Ta = 25°C 1.034 1.026 1.018 f = 1 MHz CD  Ta 1.0 5 Diode capacitance CD (pF) Forward current IF (mA) CD (Ta) CD (Ta = 25°C) 0.8 Ta = 85°C 25°C −25°C 4 VR = 1 V 4V 1.010 1.002 0.994 0.986 0.6 3 0.4 2 0.2 1 0.978 0 0 0.2 0.


2007-01-10 : 1102B    1106B    1102FB    1106FB    1102UFB    1106UFB    1110B    1110FB    1110UFB    1102C   


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