MA26V09

www.DataSheet4U.com Variable Capacitance Diodes MA26V09 Silicon epitaxial planar type Unit: mm For VCO ■ Features Good linearity and large capacitance-ratio in CD − VR relation Small series resistance rD 1 1.00±0.05 0.60±0.05 3 2 0.39+0.01 −0.03 ■ Absolute Maximum Ratings Ta = 25°C Parameter Reverse voltage (DC) Junction temperature Storage temperature Symbol VR Tj Tstg Rating 6 125 −55 to +125 Unit V °C °C 0.50±0.05 0.25±0.05 0.25±0.05 1 3 0.65±0.01 2 0.05±0.03 1: Anode 2: N.C. 3: Cathode ML3-N2 Package Marking Symbol: 2S ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Reverse current (DC) Diode capacitance Symbol IR CD(1V) CD(3V) Capacitance ratio Series resistance * Conditions VR = 5 V VR = 1 V, f = 1 MHz VR = 3 V, f = 1 MHz VR = 3 V, f = 470 MHz Min Typ Max 10 14.9 8.4 1.69 16.4 9.2 1.87 0.35 CD(1V)/CD(3V) rD Note) 1. Rated input/output frequency: 470 MHz 2. *: Measuring instrument; YHP MODEL 4191A RF IMPEDANCE ANALYZER 0.15±0.05 0.05±0.03 0.35±0.01 Unit nA pF  Ω Publication date: July 2002 SKD00078BED 1 MA26V09 IF  V F 180 160 25°C CD  VR 100 f = 1 MHz Ta = 25°C 1.036 1.032 1.028 f = 1 MHz CD  Ta Diode capacitance CD (pF) Forward current IF (mA) 140 120 Ta = 60°C 100 80 60 40 20 0 −40°C 1.024 1.020 VR = 1 V CD (Ta) CD (Ta = 25°C) 1.016 1.012 1.008 1.004 1.000 0.996 0.992 0.988 3V 10 1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 1 2 3 4 5 6 0.984 0 20 40 60 80 100 Forward voltage VF (V) Reverse voltage VR (V) Amb...