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MA26V07 Datasheet

Part Number MA26V07
Manufacturers Panasonic Semiconductor
Logo Panasonic Semiconductor
Description Silicon epitaxial planar type
Datasheet MA26V07 DatasheetMA26V07 Datasheet (PDF)

www.DataSheet4U.com Variable Capacitance Diodes MA26V07 Silicon epitaxial planar type Unit: mm For VCO ■ Features • Good linearity and large capacitance-ratio in CD − VR relation • Small series resistance rD • High frequency type by this low capacitance 0.60±0.05 3 2 1 1.00±0.05 0.39+0.01 −0.03 0.25±0.05 0.25±0.05 1 ■ Absolute Maximum Ratings Ta = 25°C Parameter Reverse voltage Junction temperature Storage temperature Symbol VR Tj Tstg Rating 6 125 −55 to +125 Unit V °C °C 0.50±0.05 3 .

  MA26V07   MA26V07






Part Number MA26V09
Manufacturers Panasonic Semiconductor
Logo Panasonic Semiconductor
Description Silicon epitaxial planar type
Datasheet MA26V07 DatasheetMA26V09 Datasheet (PDF)

www.DataSheet4U.com Variable Capacitance Diodes MA26V09 Silicon epitaxial planar type Unit: mm For VCO ■ Features • Good linearity and large capacitance-ratio in CD − VR relation • Small series resistance rD 1 1.00±0.05 0.60±0.05 3 2 0.39+0.01 −0.03 ■ Absolute Maximum Ratings Ta = 25°C Parameter Reverse voltage (DC) Junction temperature Storage temperature Symbol VR Tj Tstg Rating 6 125 −55 to +125 Unit V °C °C 0.50±0.05 0.25±0.05 0.25±0.05 1 3 0.65±0.01 2 0.05±0.03 1: Anode 2: N.C. .

  MA26V07   MA26V07







Part Number MA26V05
Manufacturers Panasonic Semiconductor
Logo Panasonic Semiconductor
Description Silicon epitaxial planar type
Datasheet MA26V07 DatasheetMA26V05 Datasheet (PDF)

www.DataSheet4U.com Variable Capacitance Diodes MA26V05 Silicon epitaxial planar type Unit: mm For VCO ■ Features • Good linearity and large capacitance-ratio in CD − VR relation • Small series resistance rD 1.00±0.05 0.60±0.05 3 2 1 0.39+0.01 −0.03 0.25±0.05 0.50±0.05 ■ Absolute Maximum Ratings Ta = 25°C Parameter Reverse voltage Junction temperature Storage temperature Symbol VR Tj Tstg Rating 10 125 −55 to +125 Unit V °C °C 0.25±0.05 1 3 0.65±0.01 2 0.05±0.03 1: Anode 2: N.C. 3: .

  MA26V07   MA26V07







Part Number MA26V04
Manufacturers Panasonic Semiconductor
Logo Panasonic Semiconductor
Description Silicon epitaxial planar type
Datasheet MA26V07 DatasheetMA26V04 Datasheet (PDF)

www.DataSheet4U.com Variable Capacitance Diodes MA26V04 Silicon epitaxial planar type Unit: mm For VCO ■ Features • Good linearity and large capacitance-ratio in CD − VR relation • Small series resistance rD 1.00±0.05 0.60±0.05 3 2 1 0.39+0.01 −0.03 0.25±0.05 0.50±0.05 ■ Absolute Maximum Ratings Ta = 25°C Parameter Reverse voltage Junction temperature Storage temperature Symbol VR Tj Tstg Rating 6 125 −55 to +125 Unit V °C °C 0.25±0.05 1 3 0.65±0.01 2 0.05±0.03 1: Anode 2: N.C. 3: C.

  MA26V07   MA26V07







Part Number MA26V03
Manufacturers Panasonic Semiconductor
Logo Panasonic Semiconductor
Description Silicon epitaxial planar type
Datasheet MA26V07 DatasheetMA26V03 Datasheet (PDF)

www.DataSheet4U.com Variable Capacitance Diodes MA26V03 Silicon epitaxial planar type Unit: mm For VCO ■ Features • Good linearity and large capacitance-ratio in CD − VR relation • Small series resistance rD • High frequency type by this low capacitance 1 1.00±0.05 0.60±0.05 3 2 0.39+0.01 −0.03 0.25±0.05 0.50±0.05 0.25±0.05 1 ■ Absolute Maximum Ratings Ta = 25°C Parameter Reverse voltage Junction temperature Storage temperature Symbol VR Tj Tstg Rating 6 125 −55 to +125 Unit V °C °C 3 .

  MA26V07   MA26V07







Silicon epitaxial planar type

www.DataSheet4U.com Variable Capacitance Diodes MA26V07 Silicon epitaxial planar type Unit: mm For VCO ■ Features • Good linearity and large capacitance-ratio in CD − VR relation • Small series resistance rD • High frequency type by this low capacitance 0.60±0.05 3 2 1 1.00±0.05 0.39+0.01 −0.03 0.25±0.05 0.25±0.05 1 ■ Absolute Maximum Ratings Ta = 25°C Parameter Reverse voltage Junction temperature Storage temperature Symbol VR Tj Tstg Rating 6 125 −55 to +125 Unit V °C °C 0.50±0.05 3 0.65±0.01 2 0.05±0.03 1: Anode 2: N.C. 3: Cathode ML3-N2 Package Marking Symbol: 2K ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Reverse current Diode capacitance Symbol IR CD1V CD3V Capacitance ratio Series resistance * Conditions VR = 5 V VR = 1 V, f = 1 MHz VR = 3 V, f = 1 MHz VR = 3 V, f = 470 MHz Min Typ Max 10 2.88 1.49 1.84 3.12 1.62 2.02 0.35 CD1V /CD3V rD Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes. 2. Absolute frequency of input and output is 470 MHz. 3. *: Measuring instrument: YHP MODEL 4191A RF IMPEDANCE ANALYZER 0.15±0.05 0.05±0.03 0.35±0.01 Unit nA pF  Ω Publication date: November 2003 SKD00077CED 1 MA26V07 IF  V F 10 CD  VR f = 1 MHz Ta = 25°C 1.048 f = 1 MHz 1.040 CD  Ta 160 Diode capacitance CD (pF) Forward current IF (mA) Ta = 60°C 120 −40°C 80 25°C 40 1.032 VR = 1 V CD (Ta) CD (Ta = 25°C) 1.024 3V 1.016 1.008 1.000 0.992 0.984 1 0 0 0.2 0.4 0.6 0.8 1.0.


2007-01-10 : 1102B    1106B    1102FB    1106FB    1102UFB    1106UFB    1110B    1110FB    1110UFB    1102C   


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