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Variable Capacitance Diodes
MA26V05
Silicon epitaxial planar type
Unit: mm
For VCO ■ Features
• G...
www.DataSheet4U.com
Variable Capacitance Diodes
MA26V05
Silicon epitaxial planar type
Unit: mm
For VCO ■ Features
Good linearity and large capacitance-ratio in CD − VR relation Small series resistance rD
1.00±0.05
0.60±0.05
3
2
1
0.39+0.01 −0.03
0.25±0.05
0.50±0.05
■ Absolute Maximum Ratings Ta = 25°C
Parameter Reverse
voltage Junction temperature Storage temperature Symbol VR Tj Tstg Rating 10 125 −55 to +125 Unit V °C °C
0.25±0.05 1
3 0.65±0.01
2 0.05±0.03
1: Anode 2: N.C. 3: Cathode ML3-N2 Package
Marking Symbol: 2J
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter Reverse current Diode capacitance Symbol IR CD1V CD4V Capacitance ratio Series resistance
*
Conditions VR = 10 V VR = 1 V, f = 1 MHz VR = 4 V, f = 1 MHz VR = 4 V, f = 470 MHz
Min
Typ
Max 10
18.5 3.6 4.7
20.5 4.1
CD1V /CD4V rD
0.65
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes. 2. Absolute frequency of input and output is 470 MHz. 3. *: Measuring instrument: YHP MODEL 4191A RF IMPEDANCE ANALYZER
0.15±0.05 0.05±0.03 0.35±0.01
Unit nA pF Ω
Publication date: November 2003
SKD00076CED
1
MA26V05
IF V F
102
CD VR
f = 1 MHz Ta = 25°C
CD Ta
1.036 1.028 1.020 1.012 1.004 0.996 0.988 4V f = 1 MHz
160
Forward current IF (mA)
Ta = 60°C 120 −40°C 80 25°C
Diode capacitance CD (pF)
VR = 1 V
10
40
0
1
CD (Ta) CD (Ta = 25°C)
0 2 4 6 8 10 12
0.980
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0
20
40
60
80
100
...