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Variable Capacitance Diodes
MA26V04
Silicon epitaxial planar type
Unit: mm
For VCO ■ Features
• G...
www.DataSheet4U.com
Variable Capacitance Diodes
MA26V04
Silicon epitaxial planar type
Unit: mm
For VCO ■ Features
Good linearity and large capacitance-ratio in CD − VR relation Small series resistance rD
1.00±0.05
0.60±0.05
3
2
1
0.39+0.01 −0.03
0.25±0.05
0.50±0.05
■ Absolute Maximum Ratings Ta = 25°C
Parameter Reverse
voltage Junction temperature Storage temperature Symbol VR Tj Tstg Rating 6 125 −55 to +125 Unit V °C °C
0.25±0.05 1
3 0.65±0.01
2 0.05±0.03
1: Anode 2: N.C. 3: Cathode ML3-N2 Package
Marking Symbol: 2H
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter Reverse current Diode capacitance Series resistance * Symbol IR CD1V CD3V rD VR = 5 V VR = 1 V, f = 1 MHz VR = 3 V, f = 1 MHz VR = 3 V, f = 470 MHz 10.0 5.8 Conditions Min Typ Max 10 11.1 6.4 0.35 Ω Unit nA pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes. 2. Absolute frequency of input and output is 470 MHz. 3. *: Measuring instrument: YHP MODEL 4191A RF IMPEDANCE ANALYZER
0.15±0.05 0.05±0.03 0.35±0.01
Publication date: November 2003
SKD00075CED
1
MA26V04
IF V F
120 25°C 100
CD VR
102 f = 1 MHz Ta = 25°C
1.032 f = 1 MHz
CD Ta
Diode capacitance CD (pF)
Forward current IF (mA)
1.024
VR = 1 V
Ta = 60°C −40°C
CD (Ta) CD (Ta = 25°C)
80
1.016
3V
60
10
1.008
40
1.000
20
0.992
0
0
0.2
0.4
0.6
0.8
1.0
1.2
1
0
2
4
6
8
0.984
0
20
40
60
80
100
Forward
voltage VF (V)
Reverse
voltage VR (...