MA160

Switching Diodes MA4X160 (MA160) Silicon epitaxial planar type For high-speed switching circuits ■ Features Two isolated elements are contained in one package, allowing high-density mounting Centrosymmetrical wiring, allowing to free from the taping direction Short reverse recovery time trr Small terminal capacitance Ct 2.90+0.02 –0.05 1.9±0.2 (0.95) (0.95) 3 4 0.16+0.1 –0.06 Unit: mm 1.50+0.25 –0.05 0.5R 2.8+0.2 –0.3 5˚ 2 (0.2) 0.60+0.10 –0.05 10˚ 1 (0.65) ■ Absolute Maximum Ratings Ta = 25°C Parameter Reverse voltage Maximum peak reverse voltage Forward current (Average) Repetitive peak forward current Non-repetitive peak Single Double Single Double Single IFSM Tj Tstg IFRM Symbol VR VRM IF(AV) Rating 40 40 100 75 225 170 500 375 150 −55 to +150 °C °C mA mA Unit V V mA +0.2 0 to 0.1 1.1–0.1 EAIJ: SC-61 Marking Symbol: M1D Internal Connection 3 4 forward surge current * Double Junction temperature Storage temperature Note) *: t = 1 s 2 1 ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Forward voltage Reverse voltage Reverse current Terminal capacitance Reverse recovery time * Symbol VF VR IR Ct trr IR = 100 µA VR = 35 V VR = 0 V, f = 1 MHz IF = 10 mA, VR = 6 V Irr = 0.1 IR , RL = 100 Ω 0.9 Conditions IF = 100 mA 40 0.1 2.0 3 Min Typ 0.95 Max 1.20 Unit V V µA pF ns Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring method for diodes. 2. Absolute frequency of input and output is 100 MHz. 3. *: trr measureme...