Switching Diodes
MA2J112 (MA112)
Silicon epitaxial planar type
Unit : mm
For switching circuits I Features
• Small S-m...
Switching Diodes
MA2J112 (MA112)
Silicon epitaxial planar type
Unit : mm
For switching circuits I Features
Small S-mini type package, allowing high-density mounting Ensuring the average forward current capacity IF(AV) = 200 mA
1.25±0.1 0.35±0.1
0.7±0.1
1 0 to 0.1
1.7±0.1 2.5±0.2
0.16+0.1 –0.06
5°
Parameter Reverse
voltage (DC) Peak reverse
voltage Average forward current *1
Symbol VR VRM IF(AV) IFM IFSM Tj Tstg
Rating 40 40 200 600 1 150 −55 to +150
Unit
0 to 0.1
V V mA mA A °C °C
Peak forward current Non-repetitive peak forward surge current*2 Junction temperature Storage temperature
1 : Anode 2 : Cathode SMini2-F1 Package
Marking Symbol: 1C
Note) *1 : With a printed-circuit board *2 : t = 1 s
I Electrical Characteristics Ta = 25°C
Parameter Reverse current (DC) Symbol IR1 IR2 IR3 Forward
voltage (DC) Terminal capacitance Reverse recovery time* VF Ct trr VR = 15 V VR = 35 V VR = 35 V, Ta = 100°C IF = 200 mA VR = 0 V, f = 1 MHz IF = 10 mA, VR = 6 V Irr = 0.1 · IR, RL = 100 Ω Conditions Min Typ Max 50 500 100 1.1 4 10 Unit nA nA µA V pF ns
Note) 1. Rated input/output frequency: 100 MHz 2. * : trr measuring circuit
Bias Application Unit N-50BU tr 10% Input Pulse tp t IF trr t Irr = 0.1 · IR IF = 10 mA VR = 6 V RL = 100 Ω Output Pulse
A
VR Pulse Generator (PG-10N) Rs = 50 Ω W.F.Analyzer (SAS-8130) Ri = 50 Ω
90% tp = 2 µs tr = 0.35 ns δ = 0.05
Note) The part number in the parenthesis shows conventional part number.
(0.15)
0.4±0.1
I Absolute Maximum Rat...