MA1114-1

MA1114-1 For PCS - 30W Power Amplifier MA1114-1 2. Electrical Performances (Tc = +25°C, Vc = +25V, Vd = +10V, Vg = –6V, Zg = Zl = 50Ω) No. Items Frequency Output Power Output RF modulation spectrum ; from the carrier 100 KHz 200 KHz 250 KHz 400 KHz 600 KHz to < 1200 KHz 1200 KHz to < 1800 KHz 1800 KHz to < 6000 KHz > 6000 KHz = Spurious ; in-band out-band Harmonics 2fo 3fo 4fo Icq Pout = +45 dBm Symbol f Pout ––– Pout = +45 dBm (Pin control) ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– –60 –65 –70 ––– +0.5 –30 –33 –60 –70 –73 –75 –80 –36 –30 ––– ––– ––– 1.5 dB dB dB dB dB dB dB dB dBm dBm dBc dBc dBc A Condition Standard Min 1930 +45 Type ––– ––– Max 1990 ––– Unit MHz dBm DESCRIPTION The MA1114-1 is a 30W power amplifier designed for PCS, which comprises 4 stages GaAs FET and 2 stages Si bipolar transistors, also RF power monitoring circuit. OUTLINE DRAWING 148 mm 142 mm 3 mm 1 2 3 MA1114-1 FEATURES s Specified +25/+10 Volt Chracteristics RF Output Power : +45 dBm (typ.) Harmonics : –65 dBc typ. s Small Size : 77 × 148 × 40 mm3 s 50 Ohm Input/Output Impedances 3 mm 71 mm 77 mm 4 HOLES φ 3.5 mm Vg(–6V:PIN#12) GND(PIN#11) Vdet(PIN#13) (out) APPLICATION s PCS (1930 ~ 1990 MHz) Base station 40 mm 25 PINs D-SUB RF IN 10 mm Vd(+10V:PIN#24) Vc(+25V:PIN#25) RF OUT 4 5 6 Quiescent current Pin = 0mW Amplifier Specifications (MA1114-1) 1. Maximum Ratings No. 1 2 3 4 5 6 Items Case temperature Storage temperature Col...