MA02206GJ

MA02206GJ 3.6V 0.5W RF Power Amplifier IC for DECT FEATURES = = = = = = = = Single Positive Supply 57% Power Added Efficiency Operation down to 1.2 V 100% Duty Cycle 1800 to 2000 MHz Operation 8 Pin Full Downset MSOP Plastic Package Accommodates Battery Charging Conditions up to 5.6 Volts ® Self-Aligned MSAG -Lite MESFET Process 8 Lead MSOP Package Package bottom is electrical and thermal ground DESCRIPTION The MA02206GJ is a DECT Power amplifier based on M/A-COM’s Self-Aligned MSAG MESFET Process. This product is designed for use in 3.6 V DECT handsets and base stations. MAXIMUM RATINGS (Beyond these limits, the device may be damaged or device reliability reduced. Functional operation at absolute–maximum–rated conditions is not implied.) Rating Symbol Value Unit DC Supply Voltage RF Input Power Junction Temperature Storage Temperature Range Operating Temperature Range Moisture Sensitivity VDD PIN TJ TSTG TOPER 6.0 10 150 -40 to +150 -40 to +100 V mW °C °C °C JEDEC Level 1 = 37 °C (Note 1), measured on evaluation ELECTRICAL CHARACTERISTICS VDD= +3.6 V, PIN= -2 dBm, Duty Cycle = 100 %, TS board shown in Figure 9. Characteristic Symbol Min Typ Max Unit Frequency Range Output Power (1900 MHz) ƒ POUT η IDD 2ƒo 3ƒo — — — — — Power Added Efficiency (1900 MHz) Drain Current (1900MHz) 1880 25.9 52 Harmonics Input VSWR Off Isolation (VDD=0 V) Thermal Resistance, Junction to soldering point (Ts) (Note 1) Load Mismatch (VDD = 4.5 V, VSWR = 5:1, PIN = -2 dBm) ...