MA02104AF

www.DataSheet4U.com MA02104AF 3.6V 1.2W RF Power Amplifier IC for N-PCS/ISM900 Applications Two-Way Paging Wireless Modems Cordless Telephones Telemetry 900 MHz ISM Features = = = = = = = = Single Positive Supply 16 Pin TSSOP Plastic Package Class AB Bias 800 - 1000 MHz Operation 50Ω Input Impedance Single Capacitor Output Match ® Self-Aligned MSAG -Lite MESFET Process Guaranteed Stability and Ruggedness VDD1 N/C GND GND RF IN GND GND N/C VDD2 GND GND GND RF OUT/VDD3 GND GND N/C Typical 3.6 Volt Performance 30.8 dBm Power Output 30.8 dB Power Gain 60% Drain Efficiency (output stage FET) 45% Power Added Efficiency -36 dBc 2nd Harmonic -54 dBc 3rd Harmonic ELECTRICAL CHARACTERISTICS VDD=3.6 V, PIN=0 dBm, TS=40 °C (Note 1), Output externally matched to 50 Ω System. Characteristic Symbol Min Typical Max Unit Frequency Range Output Power, f = 900 MHz Power Added Efficiency , f = 900 MHz Harmonics Input VSWR Thermal Resistance (Junction of 3rd stage FET to solder point of pin 13) ƒ POUT η 2ƒo 3ƒo — RTH J-S — — 900 30.4 40 30.9 45 −36 −54 1.4:1 47 942 31.5 -31 -40 2.0:1 MHz dBm % dBc dBc — °C/W Load Mismatch (VDD = 4.6 V, PIN = +3 dBm, VSWR = 8:1) Stability (PIN = -15 to +3 dBm, VDD = 3.6, 4.6 V, TS = -40 to +100 °C, Load VSWR = 8:1) Note 1: TS is the temperature measured at the soldering point of pin 13, mounted on 60 mil GETEK evaluation board in a free air condition with ambient room temperature TA=25 °C. The electrical data presented herein was taken with ...