M74DW66500B

www.DataSheet4U.com M74DW66500B 2x 64Mbit (x8/ x16, Multiple Bank, Boot Block) Flash Memory and 32Mbit Pseudo SRAM, 3V Supply, Multiple Memory Product PRELIMINARY DATA FEATURES SUMMARY ■ MULTIPLE MEMORY PRODUCT – Two 64Mbit (8M x8 or 4M x16), Multiple Bank, Page, Boot Block, Flash Memories – 32Mbit (2M x 16) Pseudo Static RAM ■ SUPPLY VOLTAGE – VCCF = VCCP = 2.7 to 3.3V – VPPF = 12V for Fast Program (optional) ■ ■ ■ Figure 1. Package FBGA ACCESS TIME: 70, 90ns LOW POWER CONSUMPTION ELECTRONIC SIGNATURE – Manufacturer Code: 0020h – Device Code: 227Eh + 2202h + 2201h LFBGA73 (ZA) 8 x 11.6mm EACH FLASH MEMORY ■ ASYNCHRONOUS PAGE READ MODE DataSheet4U.com – Page Width: 4 Words – Page Access: 25, 30ns – Random Access: 70, 90ns ■ PROGRAMMING TIME – 10µs per Byte/Word typical – 4 Words/ 8 Bytes at-a-time Program ■ ■ DataShee ■ VPP/WP PIN for FAST PROGRAM and WRITE PROTECT TEMPORARY BLOCK UNPROTECTION MODE COMMON FLASH INTERFACE – 64 bit Security Code EXTENDED MEMORY BLOCK – Extra block used as security block or to store additional information MEMORY BLOCKS – Quadruple Bank Memory Array: 8Mbits + 24Mbits + 24Mbits + 8Mbits – Parameter Blocks (at both Top and Bottom) ■ ■ ■ DUAL OPERATIONS – While Program or Erase in a group of banks (from 1 to 3), Read in any of the other banks ■ ■ PROGRAM/ERASE SUSPEND and RESUME MODES – Read from any Block during Program Suspend – Read and Program another Block during Erase Suspend 100,000 PROGRAM/ERASE CYCLES per BLOCK PSRAM ■ ACCE...