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M6MGB321S4TP

Renesas
Part Number M6MGB321S4TP
Manufacturer Renesas
Description CMOS SRAM
Published Jun 25, 2006
Datasheet PDF File M6MGB321S4TP PDF File

M6MGB321S4TP
M6MGB321S4TP


Features
DINOR (Divided bit-line NOR) architecture for the memory cell.Access Time Flash 85ns (Max.) 4M-bit SRAM is a 524,288 bytes / 262,144 words SRAM 85ns (Max.) asynchronous SRAM fabricated by silicon-gate CMOS technology.Supply Voltage VCC=2.7 ~ 3.6V T...




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