M6MGB/T162S4BVP 16,777,216-BIT (1,048,576 -WORD BY 16-BIT ) CMOS
3.3V-ONLY FLASH MEMORY & 4,194,304-BIT (524,288-WORD BY...
M6MGB/T162S4BVP 16,777,216-BIT (1,048,576 -WORD BY 16-BIT )
CMOS
3.3V-ONLY FLASH MEMORY & 4,194,304-BIT (524,288-WORD BY 8-BIT)
CMOS SRAM Stacked-MCP (Multi Chip Package)
MITSUBISHI LSIs
DESCRIPTION
FEATURES
The MITSUBISHI M6MGB/T162S4BVP is a Stacked Multi Access time Chip Package (S-MCP) that contents 16M-bits flash memory Flash Memory 90ns (Max.) and 4M-bits Static RAM in a 48-pin TSOP (TYPE-I). SRAM 85ns (Max.) Supply
voltage Vcc=2.7 ~ 3.6V 16M-bits Flash memory is a 1048576 words, 3.3V-only, and Ambient temperature high performance non-volatile memory fabricated by
CMOS W version Ta=-20 ~ 85°C technology for the peripheral circuit and DINOR(DIvided Package : 48-pin TSOP (Type-I) , 0.4mm lead pitch bit-line NOR) architecture for the memory cell. 4M-bits SRAM is a 262144words unsynchronous SRAM fabricated by silicon-gate
CMOS technology. APPLICATION M6MGB/T162S4BVP is suitable for the application of the Mobile communication products mobile-communication-system to reduce both the mount space and weight .
PIN CONFIGURATION (TOP VIEW)
A15 A14 A13 A12 A11 A10 A9 A8 A19 S-CE WE# F-RP# F-WP# S-VCC F-RY/BY# A18 A17 A7 A6 A5 A4 A3 A2 A1 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 A16 DQ15 GND S-A-1 DQ7 DQ14 DQ6 DQ13 DQ5 DQ12 DQ4 F-VCC DQ11 DQ3 DQ10 DQ2 DQ9 DQ1 DQ8 DQ0 OE# GND F-CE# A0
10.0 mm
14.0 mm
F-VCC S-VCC GND S-A-1 A0-A17 A18-A19 DQ0-DQ15 F-CE# S-CE OE# WE# F-WP# F-RP# ...
