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M68732 Datasheet

Part Number M68732
Manufacturers Mitsubishi
Logo Mitsubishi
Description SILICON MOS FET POWER AMPLIFIER
Datasheet M68732 DatasheetM68732 Datasheet (PDF)

MITSUBISHI RF POWER MODULE M68732EH SILICON MOS FET POWER AMPLIFIER, 520-530MHz, 6.5W, FM PORTABLE RADIO OUTLINE DRAWING 30±0.2 26.6±0.2 21.2±0.2 Dimensions in mm BLOCK DIAGRAM 2 3 2-R1.5±0.1 1 5 1 2 3 4 4 5 0.45 6±1 13.7±1 18.8±1 23.9±1 PIN: 1 Pin : RF INPUT 2 VGG : GATE BIAS SUPPLY 3 VDD : DRAIN BIAS SUPPLY 4 PO : RF OUTPUT 5 GND: FIN H46 ABSOLUTE MAXIMUM RATINGS (Tc=25°C unless otherwise noted) Symbol VDD VGG Pin PO TC (OP) Tstg Parameter Supply voltage Gate bias voltage Input pow.

  M68732   M68732






Part Number M68732
Manufacturers Mitsubishi
Logo Mitsubishi
Description SILICON MOS FET POWER AMPLIFIER
Datasheet M68732 DatasheetM68732 Datasheet (PDF)

MITSUBISHI RF POWER MODULE M68732EH SILICON MOS FET POWER AMPLIFIER, 520-530MHz, 6.5W, FM PORTABLE RADIO OUTLINE DRAWING 30±0.2 26.6±0.2 21.2±0.2 Dimensions in mm BLOCK DIAGRAM 2 3 2-R1.5±0.1 1 5 1 2 3 4 4 5 0.45 6±1 13.7±1 18.8±1 23.9±1 PIN: 1 Pin : RF INPUT 2 VGG : GATE BIAS SUPPLY 3 VDD : DRAIN BIAS SUPPLY 4 PO : RF OUTPUT 5 GND: FIN H46 ABSOLUTE MAXIMUM RATINGS (Tc=25°C unless otherwise noted) Symbol VDD VGG Pin PO TC (OP) Tstg Parameter Supply voltage Gate bias voltage Input pow.

  M68732   M68732







SILICON MOS FET POWER AMPLIFIER

MITSUBISHI RF POWER MODULE M68732EH SILICON MOS FET POWER AMPLIFIER, 520-530MHz, 6.5W, FM PORTABLE RADIO OUTLINE DRAWING 30±0.2 26.6±0.2 21.2±0.2 Dimensions in mm BLOCK DIAGRAM 2 3 2-R1.5±0.1 1 5 1 2 3 4 4 5 0.45 6±1 13.7±1 18.8±1 23.9±1 PIN: 1 Pin : RF INPUT 2 VGG : GATE BIAS SUPPLY 3 VDD : DRAIN BIAS SUPPLY 4 PO : RF OUTPUT 5 GND: FIN H46 ABSOLUTE MAXIMUM RATINGS (Tc=25°C unless otherwise noted) Symbol VDD VGG Pin PO TC (OP) Tstg Parameter Supply voltage Gate bias voltage Input power Output power Operation case temperature Storage temperature Conditions VGG≤3.5V, ZG=ZL=50Ω f=520-530MHz, ZG=ZL=50Ω f=520-530MHz, ZG=ZL=50Ω f=520-530MHz, ZG=ZL=50Ω Ratings 9.2 4 70 10 -30 to +100 -40 to +110 Unit V V mW W °C °C Note. Above parameters are guaranteed independently. ELECTRICAL CHARACTERISTICS (Tc=25°C,ZG=ZL=50Ω unless otherwise noted) Symbol f PO ηT 2fO ρin Frequency range Output power Total efficiency 2nd. harmonic Input VSWR Stability Load VSWR tolerance Parameter Test conditions Limits Min 520 6.5 35 Max 530 Unit MHz W % dBc - VDD=7.2V, VGG=3.5V, Pin=50mW ZG=50Ω, VDD=4-9.2V, Load VSWR<4:1 VDD=9.2V, Pin=50mW, PO=6.5W (VGG adjust), ZL=20:1 -25 4 No parasitic oscillation No degradation or destroy Note. Above parameters, ratings, limits and test conditions are subject to change. Nov. ´97 MITSUBISHI RF POWER MODULE M68732EH SILICON MOS FET POWER AMPLIFIER, 520-530MHz, 6.5W, FM PORTABLE RADIO TYPICAL PERFORMANCE DATA OUTPUT POWER, INPUT VSWR, TOTAL EFFICIENCY VS. FR.


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