M68710TL

MITSUBISHI RF POWER MODULE M68710TL SILICON MOS FET POWER AMPLIFIER, 330-360MHz, 2W, FM PORTABLE RADIO OUTLINE DRAWING 30±0.2 26.6±0.2 21.2±0.2 Dimensions in mm BLOCK DIAGRAM 2 3 2-R1.5±0.1 5 1 2 3 4 1 4 5 0.45 6±1 13.7±1 18.8±1 23.9±1 PIN: 1 Pin : RF INPUT 2 VGG : GATE BIAS SUPPLY 3 VDD : DRAIN BIAS SUPPLY 4 PO : RF OUTPUT 5 GND: FIN H46 ABSOLUTE MAXIMUM RATINGS (Tc=25°C unless otherwise noted) Symbol VDD VGG Pin PO TC (OP) Tstg Parameter Supply voltage Gate bias voltage Input power Output power Operation case temperature Storage temperature Conditions VGG≤3.5V, ZG=ZL=50Ω f=330-360MHz, ZG=ZL=50Ω f=330-360MHz, VDD≤9V, ZG=ZL=50Ω f=330-360MHz, VDD≤9V, ZG=ZL=50Ω Ratings 9 4 30 3 -30 to +110 -40 to +110 Unit V V mW W °C °C Note. Above parameters are guaranteed independently. ELECTRICAL CHARACTERISTICS (Tc=25°C, ZG=ZL=50Ω unless otherwise noted) Symbol f PO ηT 2fO ρin Frequency range Output power Total efficiency 2nd. harmonic Input VSWR Stability Load VSWR tolerance Parameter Test conditions Limits Min 330 2 40 Max 360 Unit MHz W % dBc - VDD=6V, VGG=3.5V, Pin=20mW ZG=50Ω, VDD=4-8V, Load VSWR<4:1 VDD=9V, Pin=20mW, PO=2W (VGG adjust), ZL=20:1 -25 4 No parasitic oscillation No degradation or destroy Note. Above parameters, ratings, limits and test conditions are subject to change. Nov. ´97 ...