revision-01, 17th July '00
MITSUBISHI LSIs
M5M5V416BUG - 70H I
4194304-BIT (262144-WORD BY 16-BIT) CMOS STATIC RAM
DE...
revision-01, 17th July '00
MITSUBISHI LSIs
M5M5V416BUG - 70H I
4194304-BIT (262144-WORD BY 16-BIT)
CMOS STATIC RAM
DESCRIPTION
The M5M5V416B is a f amily of low v oltage 4-Mbit static RAMs organized as 262,144-words by 16-bit, f abricated by Mitsubishi's high-perf ormance 0.25µm
CMOS technology . The M5M5V416B is suitable f or memory applications where a simple interf acing , battery operating and battery backup are the important design objectiv es. M5M5V416BUG is packaged in a CSP (chip scale package), with the outline of 7mm x 8.5mm, ball matrix of 6 x 8 (48pin) and ball pitch of 0.75mm. It giv es the best solution f or a compaction of mounting area as well as f lexibility of wiring pattern of printed circuit boards.
Those are summarized in the part name table below.
FEATURES
Single +2.7~+3.6V power supply Small stand-by current: 0.3µA(3V,ty p.) No clocks, No ref resh Data retention supply v oltage =2.0V to 3.6V All inputs and outputs are TTL compatible. Easy memory expansion by S1, S2, BC1 and BC2 Common Data I/O Three-state outputs: OR-tie capability OE prev ents data contention in the I/O bus Process technology : 0.25µm
CMOS Package: 48pin 7mm x 8.5mm CSP
Version, Operating temperature Part name
Power Supply
Access time
max.
Activ e current ty pical * Ratings (max.) Icc1 25°C 40°C 25°C 40°C 70°C 85°C (3.0V, ty p.) Stand-by c urrent Icc (PD), Vcc=3.0V 50mA (10MHz) 7mA (1MHz)
I-v ersion
-40 ~ +85°C
M5M5V416BUG -70HI
2.7 ~ 3.6V
70ns
0.3µA
1µA
1µA
3µA
15µA...