DatasheetsPDF.com

M5M5V108CVP-70H Datasheet

Part Number M5M5V108CVP-70H
Manufacturers Mitsubishi
Logo Mitsubishi
Description 1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM
Datasheet M5M5V108CVP-70H DatasheetM5M5V108CVP-70H Datasheet (PDF)

MITSUBISHI LSIs M5M5V108CFP,VP,RV,KV,KR -70H, -10H, -70X, -10X 1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM DESCRIPTION The M5M5V108CFP,VP,RV,KV,KR are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance quadruple-polysilicon and double metal CMOS technology. The use of thin film transistor (TFT) load cells and CMOS periphery result in a high density and low power static RAM. They are low standby current and low operation current and i.

  M5M5V108CVP-70H   M5M5V108CVP-70H






Part Number M5M5V108CVP-70XI
Manufacturers Mitsubishi
Logo Mitsubishi
Description 1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM
Datasheet M5M5V108CVP-70H DatasheetM5M5V108CVP-70XI Datasheet (PDF)

MITSUBISHI LSIs M5M5V108CFP,VP,RV,KV,KR -70HI, -10HI, -70XI, -10XI 1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM DESCRIPTION The M5M5V108CFP,VP,RV,KV,KR are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance quadruple-polysilicon and double metal CMOS technology. The use of thin film transistor (TFT) load cells and CMOS periphery result in a high density and low power static RAM. They are low standby current and low operation current a.

  M5M5V108CVP-70H   M5M5V108CVP-70H







Part Number M5M5V108CVP-70X
Manufacturers Mitsubishi
Logo Mitsubishi
Description 1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM
Datasheet M5M5V108CVP-70H DatasheetM5M5V108CVP-70X Datasheet (PDF)

MITSUBISHI LSIs M5M5V108CFP,VP,RV,KV,KR -70H, -10H, -70X, -10X 1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM DESCRIPTION The M5M5V108CFP,VP,RV,KV,KR are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance quadruple-polysilicon and double metal CMOS technology. The use of thin film transistor (TFT) load cells and CMOS periphery result in a high density and low power static RAM. They are low standby current and low operation current and i.

  M5M5V108CVP-70H   M5M5V108CVP-70H







Part Number M5M5V108CVP-70HI
Manufacturers Mitsubishi
Logo Mitsubishi
Description 1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM
Datasheet M5M5V108CVP-70H DatasheetM5M5V108CVP-70HI Datasheet (PDF)

MITSUBISHI LSIs M5M5V108CFP,VP,RV,KV,KR -70HI, -10HI, -70XI, -10XI 1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM DESCRIPTION The M5M5V108CFP,VP,RV,KV,KR are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance quadruple-polysilicon and double metal CMOS technology. The use of thin film transistor (TFT) load cells and CMOS periphery result in a high density and low power static RAM. They are low standby current and low operation current a.

  M5M5V108CVP-70H   M5M5V108CVP-70H







1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM

MITSUBISHI LSIs M5M5V108CFP,VP,RV,KV,KR -70H, -10H, -70X, -10X 1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM DESCRIPTION The M5M5V108CFP,VP,RV,KV,KR are a 1048576-bit CMOS static RAM organized as 131072 word by 8-bit which are fabricated using high-performance quadruple-polysilicon and double metal CMOS technology. The use of thin film transistor (TFT) load cells and CMOS periphery result in a high density and low power static RAM. They are low standby current and low operation current and ideal for the battery back-up application. The M5M5V108CVP,RV,KV,KR are packaged in a 32-pin thin small outline package which is a high reliability and high density surface mount device(SMD). Two types of devices are available. M5M5V108CVP,KV(normal lead bend type package), M5M5V108CRV,KR(reverse lead bend type package).Using both types of devices, it becomes very easy to design a printed circuit board. PIN CONFIGURATION (TOP VIEW) NC 1 A16 2 A14 3 A12 4 A7 5 A6 6 A5 7 A4 8 A3 9 A2 10 A1 11 A0 12 DQ1 13 DQ2 14 DQ3 15 GND 16 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 ADDRESS INPUTS FEATURES Type name M5M5V108CFP,VP,RV,KV,KR-70H Access time (max) Power supply current DATA INPUTS/ OUTPUTS VCC Active stand-by (1MHz) (max) (max) VCC ADDRESS A15 INPUT CHIP SELECT S2 INPUT WRITE CONTROL W INPUT A13 A8 ADDRESS INPUTS A9 A11 OUTPUT ENABLE OE INPUT ADDRESS A10 INPUT CHIP SELECT S1 INPUT DQ8 DQ7 DQ6 DATA INPUTS/ DQ5 OUTPUTS DQ4 Outline 32P2M-A A11 A9 A8 A13 W S2 A15 VCC NC A16 A14 A12.


2005-04-26 : D7088    MTW8N60E    MTW8N60E    MBR1550CT    MBR1560    MBR1560CT    MBR1560CT    MBR1560CT    MBR16100CT    MBR1620   


@ 2014 :: Datasheetspdf.com ::
Semiconductors datasheet search & download site (Privacy Policy & Contact)