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M5M5256KP-45XL-W Datasheet

Part Number M5M5256KP-45XL-W
Manufacturers Mitsubishi
Logo Mitsubishi
Description 262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM
Datasheet M5M5256KP-45XL-W DatasheetM5M5256KP-45XL-W Datasheet (PDF)

'97.4.7 MITSUBISHI LSIs M5M5256DP,KP,FP,VP,RV -45LL-W,-55LL-W,-70LL-W, -45XL-W,-55XL-W,-70XL-W 262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM DESCRIPTION The M5M5256DP,KP,FP,VP,RV is 262,144-bit CMOS static RAMs organized as 32,768-words by 8-bits which is fabricated using high-performance 3 polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery results in a high density and low power static RAM. Stand-by current is small enough for battery back-up application..

  M5M5256KP-45XL-W   M5M5256KP-45XL-W






Part Number M5M5256KP-45XL-I
Manufacturers Mitsubishi
Logo Mitsubishi
Description 262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM
Datasheet M5M5256KP-45XL-W DatasheetM5M5256KP-45XL-I Datasheet (PDF)

'97.4.7 MITSUBISHI LSIs M5M5256DP,KP,FP,VP,RV -45LL-I,-55LL-I,-70LL-I, -45XL-I,-55XL-I,-70XL-I 262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM DESCRIPTION The M5M5256DP,KP,FP,VP,RV is 262,144-bit CMOS static RAMs organized as 32,768-words by 8-bits which is fabricated using high-performance 3 polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery results in a high density and low power static RAM. Stand-by current is small enough for battery back-up application..

  M5M5256KP-45XL-W   M5M5256KP-45XL-W







262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM

'97.4.7 MITSUBISHI LSIs M5M5256DP,KP,FP,VP,RV -45LL-W,-55LL-W,-70LL-W, -45XL-W,-55XL-W,-70XL-W 262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM DESCRIPTION The M5M5256DP,KP,FP,VP,RV is 262,144-bit CMOS static RAMs organized as 32,768-words by 8-bits which is fabricated using high-performance 3 polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery results in a high density and low power static RAM. Stand-by current is small enough for battery back-up application. It is ideal for the memory systems which require simple interface. Especially the M5M5256DVP,RV are packaged in a 28-pin thin small outline package.Two types of devices are available, M5M5256DVP(normal lead bend type package), M5M5256DRV(reverse lead bend type package). Using both types of devices, it becomes very easy to design a printed circuit board. PIN CONFIGURATION (TOP VIEW) A14 A12 1 2 A7 3 A6 4 A5 5 A4 6 7 A3 A2 8 A1 9 A0 10 DQ1 11 DQ2 12 DQ3 13 GND 14 28 27 26 25 24 23 22 21 20 19 18 17 16 15 Vcc /W A13 A8 A9 A11 /OE A10 /S DQ8 DQ7 DQ6 DQ5 DQ4 M5M5256DP,KP,FP -W FEATURE Type Access Power supply current time Active Stand-by (max) (max) (max) 45ns 55ns 70ns 45ns 55ns 70ns 55mA (Vcc=5.5V) M5M5256DP, KP, FP,VP,RV-45LL M5M5256DP, KP, FP,VP,RV-55LL M5M5256DP, KP, FP,VP,RV-70LL M5M5256DP, KP, FP,VP,RV-45XL M5M5256DP, KP, FP,VP,RV-55XL M5M5256DP, KP, FP,VP,RV-70XL Outline 28P4 (DP) 28P4Y (DKP) 28P2W-C (DFP) 22 /OE 23 A11 24 A9 25 A8 26 A13 27 /W 28Vcc 1 A14 2 A12 3 A7 4 A6 5 A5.


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