'97.4.7
MITSUBISHI LSIs
M5M5256DFP,VP,RV -70VLL-I,-85VLL-I, -70VXL-I,-85VXL-I
262144-BIT (32768-WORD BY 8-BIT) CMOS ST...
'97.4.7
MITSUBISHI LSIs
M5M5256DFP,VP,RV -70VLL-I,-85VLL-I, -70VXL-I,-85VXL-I
262144-BIT (32768-WORD BY 8-BIT)
CMOS STATIC RAM
DESCRIPTION
The M5M5256DFP,VP,RV is 262,144-bit
CMOS static RAMs organized as 32,768-words by 8-bits which is fabricated using high-performance 3 polysilicon
CMOS technology. The use of resistive load NMOS cells and
CMOS periphery results in a high density and low power static RAM. Stand-by current is small enough for battery back-up application. It is ideal for the memory systems which require simple interface. Especially the M5M5256DVP,RV are packaged in a 28-pin thin small outline package.Two types of devices are available, M5M5256DVP(normal lead bend type package), M5M5256DRV(reverse lead bend type package). Using both types of devices, it becomes very easy to design a printed circuit board.
PIN CONFIGURATION (TOP VIEW)
A14 A12 1 2 A7 3 A6 4 A5 5 A4 6 7 A3 A2 8 A1 9 A0 10 DQ1 11 DQ2 12 DQ3 13 GND 14 28 27 26 25 24 23 22 21 20 19 18 17 16 15 Vcc /W A13 A8 A9 A11 /OE A10 /S DQ8 DQ7 DQ6 DQ5 DQ4
M5M5256DFP -I
FEATURE
Type Access Power supply current time Active Stand-by (max) (max) (max) 70ns 24µA M5M5256DFP,VP,RV-85VLL 85ns 25mA
(Vcc=3.6V) (Vcc=3.6V)
Outline 28P2W-C (DFP) 22 /OE 23 A11 24 A9 25 A8 26 A13 27 /W 28Vcc 1 A14 2 A12 3 A7 4 A6 5 A5 6 A4 7 A3 A10 21 /S 20 DQ8 19 DQ7 18 DQ6 17 DQ5 16 DQ415 GND 14 DQ3 13 DQ2 12 DQ1 11 A0 10 A1 9 A2 8
M5M5256DFP,VP,RV-70VLL
M5M5256DFP,VP,RV-70VXL M5M5256DFP,VP,RV-85VXL
70ns 85ns
4.8µA
(Vcc=3.6V)
0....