MITSUBISHI LSIs
M5M51R16AWG -10LI, -12LI, -15LI, -10HI, -12HI, -15HI
1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM
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MITSUBISHI LSIs
M5M51R16AWG -10LI, -12LI, -15LI, -10HI, -12HI, -15HI
1048576-BIT(65536-WORD BY 16-BIT)
CMOS STATIC RAM
DESCRIPTION The M5M51R16AWG is a 1048576-bit
CMOS static RAM organized as 65536 words by 16-bits, which are fabricated using high-performance
CMOS technology. The use of
CMOS cells and periphery results in a high density and low power static RAM. The M5M51R16AWG can achieve low stand-by current and low operation current and ideal for the battery back-up application. The M5M51R16AWG is packaged in a 48-pin chip scale package which is a high reliability and high density surface mount device (SMD). Using this type of devices, it becomes very easy to design a small system. The M5M51R16AWG is fully compatible with the M5M51R16WG.
PIN CONFIGURATION (TOP VIEW)
1 A
BC1
2
3
4
5
6
OE BC2
A6 A7 A5 NC
A3 A2 A1 A4 NC A14 A13 A12
A0 S DQ2 DQ4
NC DQ1 DQ3
B
DQ16
C
DQ14 DQ15
D
GND DQ13
VCC
E VCC F
DQ11 DQ10 A9 A10 A11 DQ7 W A15 DQ6 DQ8 NC DQ12 GND DQ5 GND
FEATURE Power supply current Type name M5M51R16AWG- 10LI M5M51R16AWG- 12LI M5M51R16AWG- 15LI M5M51R16AWG- 10HI M5M51R16AWG- 12HI M5M51R16AWG- 15HI Access time (max) 100ns 120ns 150ns 100ns 120ns 150ns Active (max) Stand-by (max) 4µA 10mA (1MHz) 2µA
G
DQ9 NC A8
H
NC
PIN CONFIGURATION (BOTTOM VIEW)
Single +1.8V~2.7V power supply Low power down current 0.05µA(typ.) Directly TTL compatible : All inputs and outputs Easy memory expansion and power down by S,BC1 and BC2 Data hold on +1.0V power supp...