DatasheetsPDF.com

M58WR064EB

ST Microelectronics

64 Mbit 4Mb x 16 / Multiple Bank / Burst 1.8V Supply Flash Memory

M58WR064ET M58WR064EB 64 Mbit (4Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory FEATURES SUMMARY s SUPPLY VOLTAG...


ST Microelectronics

M58WR064EB

File Download Download M58WR064EB Datasheet


Description
M58WR064ET M58WR064EB 64 Mbit (4Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory FEATURES SUMMARY s SUPPLY VOLTAGE – VDD = 1.65V to 2.2V for Program, Erase and Read – VDDQ = 1.65V to 3.3V for I/O Buffers – VPP = 12V for fast Program (optional) s Figure 1. Package SYNCHRONOUS / ASYNCHRONOUS READ – Synchronous Burst Read mode: 54MHz – Asynchronous/ Synchronous Page Read mode – Random Access: 70, 80, 100 ns FBGA s PROGRAMMING TIME – 8µs by Word typical for Fast Factory Program – Double/Quadruple Word Program option – Enhanced Factory Program options VFBGA56 (ZB) 7.7 x 9 mm s MEMORY BLOCKS – Multiple Bank Memory Array: 4 Mbit Banks – Parameter Blocks (Top or Bottom location) s ELECTRONIC SIGNATURE – Manufacturer Code: 20h – Top Device Code, M58WR064ET: 8810h – Bottom Device Code, M58WR064EB: 8811h s DUAL OPERATIONS – Program Erase in one Bank while Read in others – No delay between Read and Write operations s BLOCK LOCKING – All blocks locked at Power up – Any combination of blocks can be locked – WP for Block Lock-Down s SECURITY – 128 bit user programmable OTP cells – 64 bit unique device number – One parameter block permanently lockable s s COMMON FLASH INTERFACE (CFI) 100,000 PROGRAM/ERASE CYCLES per BLOCK February 2003 1/82 M58WR064ET, M58WR064EB TABLE OF CONTENTS SUMMARY DESCRIPTION . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Figure 2. Logic Diagram . . . . . . . . . . . . ....




Similar Datasheet




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)