DatasheetsPDF.com

M58LR128HB Datasheet

Part Number M58LR128HB
Manufacturers ST Microelectronics
Logo ST Microelectronics
Description (M58LR128Hx) Flash memories
Datasheet M58LR128HB DatasheetM58LR128HB Datasheet (PDF)

www.DataSheet4U.com M58LR128HT M58LR128HB 128 Mbit (8 Mb ×16, Multiple Bank, Multilevel interface, Burst) 1.8 V supply Flash memories Features ■ Supply voltage – VDD = 1.7 V to 2.0 V for program, erase and read – VDDQ = 1.7 V to 2.0 V for I/O Buffers – VPP = 9 V for fast program Synchronous / Asynchronous Read – Synchronous Burst Read mode: 54 MHz – Asynchronous Page Read mode – Random access: 85 ns Synchronous Burst Read Suspend Programming time – 2.5 µs typical word program time using Buffer.

  M58LR128HB   M58LR128HB






Part Number M58LR128HT
Manufacturers ST Microelectronics
Logo ST Microelectronics
Description (M58LR128Hx) Flash memories
Datasheet M58LR128HB DatasheetM58LR128HT Datasheet (PDF)

www.DataSheet4U.com M58LR128HT M58LR128HB 128 Mbit (8 Mb ×16, Multiple Bank, Multilevel interface, Burst) 1.8 V supply Flash memories Features ■ Supply voltage – VDD = 1.7 V to 2.0 V for program, erase and read – VDDQ = 1.7 V to 2.0 V for I/O Buffers – VPP = 9 V for fast program Synchronous / Asynchronous Read – Synchronous Burst Read mode: 54 MHz – Asynchronous Page Read mode – Random access: 85 ns Synchronous Burst Read Suspend Programming time – 2.5 µs typical word program time using Buffer.

  M58LR128HB   M58LR128HB







(M58LR128Hx) Flash memories

www.DataSheet4U.com M58LR128HT M58LR128HB 128 Mbit (8 Mb ×16, Multiple Bank, Multilevel interface, Burst) 1.8 V supply Flash memories Features ■ Supply voltage – VDD = 1.7 V to 2.0 V for program, erase and read – VDDQ = 1.7 V to 2.0 V for I/O Buffers – VPP = 9 V for fast program Synchronous / Asynchronous Read – Synchronous Burst Read mode: 54 MHz – Asynchronous Page Read mode – Random access: 85 ns Synchronous Burst Read Suspend Programming time – 2.5 µs typical word program time using Buffer Enhanced Factory Program command Memory organization – Multiple Bank memory array: 8 Mbit banks – Parameter Blocks (top or bottom location) Dual operations – program/erase in one Bank while read in others – No delay between read and write operations Block locking – All blocks locked at power-up – Any combination of blocks can be locked with zero latency – WP for Block Lock-Down – Absolute Write Protection with VPP = VSS Security – 64 bit unique device number – 2112 bit user programmable OTP Cells Common Flash Interface (CFI) 100 000 program/erase cycles per block ■ ■ FBGA ■ VFBGA56 (ZB) 7.7 × 9 mm ■ ■ ■ Electronic signature – Manufacturer code: 20h – Top device codes: M58LR128HT: 88C4h – Bottom device codes M58LR128HB: 88C5h VFBGA56 package – ECOPACK® compliant ■ ■ ■ ■ ■ February 2007 Rev 1 1/112 www.st.com 1 Contents M58LR128HT, M58LR128HB Contents 1 2 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Signa.


2007-04-05 : ADA4937-1    BUL7216    BULB128-1    BULB49DT4    BULD39D-1    BULD39DT4    BULK128D-B    BUT70W    BUX98APW    DL50   


@ 2014 :: Datasheetspdf.com ::
Semiconductors datasheet search & download site (Privacy Policy & Contact)