M53230404CY0

www.DataSheet4U.com DRAM MODULE M53230404CY0/CT0-C 4Byte 4Mx32 SIMM (4Mx16 base) DataSheet4U.com DataShee Revision 0.0 June 1999 DataSheet4U.com DataSheet 4 U .com www.DataSheet4U.com DRAM MODULE Revision History Version 0.0 (June 1999) The 4th. generation of 64Mb DRAM components are applied for this module. M53230404CY0/CT0-C et4U.com DataSheet4U.com DataShee DataSheet4U.com DataSheet4 U .com www.DataSheet4U.com DRAM MODULE M53230404CY0/CT0-C EDO Mode 4M x 32 DRAM SIMM Using 4Mx16, 4K Refresh, 5V GENERAL DESCRIPTION The Samsung M53230404CY0/CT0-C is a 4Mx32bits Dynamic RAM high density memory module. The Samsung M53230404CY0/CT0-C consists of two CMOS 4Mx16bits DRAMs in TSOP packages mounted on a 72-pin glass-epoxy substrate. A 0.1 or 0.22uF decoupling capacitor is mounted on the printed circuit board for each DRAM. The M53230404CY0/CT0-C is a Single In-line Memory Module with edge connections and is intended for mounting into 72 pin edge connector sockets. M53230404CY0/CT0-C FEATURES Part Identification - M53230404CY0-C(4K cycles/64ms Ref, TSOP, Solder) - M53230404CT0-C(4K cycles/64ms Ref, TSOP, Gold) Extended Data Out Mode Operation CAS-before-RAS & Hidden Refresh capability RAS-only refresh capability TTL compatible inputs and outputs Single +5V±10% power supply JEDEC standard PDpin & pinout PCB : Height(1000mil), single sided component PERFORMANCE RANGE Speed -C50 -C60 tRAC 50ns 60ns tCAC 13ns 15ns tRC 84ns 104ns tHPC 20ns 25ns ...