M4N37

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by M4N37/D M4N37 6-Pin DIP Optoisolators Transistor Output The M4N37 device consists of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector. Current Transfer Ratio — 100% Minimum @ Specified Conditions Guaranteed Switching Speeds Meets or Exceeds All JEDEC Registered Specifications Applications General Purpose Switching Circuits Interfacing and coupling systems of different potentials and impedances Regulation Feedback Circuits Monitor & Detection Circuits Solid State Relays 1 2 Symbol Value Unit 3 PIN 1. 2. 3. 4. 5. 6. LED ANODE LED CATHODE N.C. EMITTER COLLECTOR BASE STANDARD THRU HOLE 6 1 STYLE 1 PLASTIC SCHEMATIC 6 5 4 MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Rating INPUT LED Reverse Voltage Forward Current — Continuous LED Power Dissipation @ TA = 25°C with Negligible Power in Output Detector Derate above 25°C OUTPUT TRANSISTOR Collector–Emitter Voltage Emitter–Base Voltage Collector–Base Voltage Collector Current — Continuous Detector Power Dissipation @ TA = 25°C with Negligible Power in Input LED Derate above 25°C TOTAL DEVICE Isolation Source Voltage(1) (Peak ac Voltage, 60 Hz, 1 sec Duration) Total Device Power Dissipation @ TA = 25°C Derate above 25°C Ambient Operating Temperature Range(2) Storage Temperature Range(2) Soldering Temperature (10 sec, 1/16″ from case) VISO PD TA Tstg TL 7500 250 2.94 – 55 to +100 – 55 to ...