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M48T128Y

ST Microelectronics

1-Mbit SRAM

M48T128Y 5.0 V, 1 Mbit (128 Kb x 8) TIMEKEEPER® SRAM Not recommended for new design Features ■ Integrated, ultra low ...


ST Microelectronics

M48T128Y

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Description
M48T128Y 5.0 V, 1 Mbit (128 Kb x 8) TIMEKEEPER® SRAM Not recommended for new design Features ■ Integrated, ultra low power SRAM, real-time clock, power-fail control circuit, battery, and crystal ) ■ BCD coded year, month, day, date, hours, t(s minutes, and seconds c ■ Automatic power-fail chip deselect and WRITE u protection rod ■ WRITE protect voltage VCC = 4.5 to 5.5 V; 4.1 V ≤ VPFD ≤ 4.5 V P (VPFD = power-fail deselect voltage) te ■ Conventional SRAM operation; unlimited le WRITE cycles so ■ Software-controlled clock calibration for high b accuracy applications O ■ 10 years of data retention and clock operation - in the absence of power t(s) ■ Self-contained battery and crystal in the DIP package uc ■ Pin and function compatible with JEDEC d standard 128 K x 8 SRAMs ro ■ RoHS compliant Obsolete P – Lead-free second level interconnect 32 1 PMDIP32 module September 2011 Doc ID 5746 Rev 7 This is information on a product still in production but not recommended for new designs. 1/23 www.st.com 1 Contents Contents M48T128Y 1 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 2 Operation modes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 2.1 READ mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 2.2 WRITE mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...




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