M36W0R5020T0

www.DataSheet4U.com M36W0R5020T0 M36W0R5020B0 32 Mbit (2Mb x16, Multiple Bank, Burst) Flash Memory and 4 Mbit SRAM, 1.8V Supply Multi-Chip Package FEATURES SUMMARY MULTI-CHIP PACKAGE – 1 die of 32 Mbit (2Mb x 16) Flash Memory – 1 die of 4 Mbit (256Kb x16) SRAM ■ SUPPLY VOLTAGE – VDDF = VDDQ = VDDS = 1.7 to 1.95V ■ LOW POWER CONSUMPTION ■ ELECTRONIC SIGNATURE – Manufacturer Code: 20h – Device Code (Top Flash Configuration): 8814h – Device Code (Bottom Flash Configuration): 8815h ■ PACKAGE – Compliant with Lead-Free Soldering Processes – Lead-Free Versions FLASH MEMORY ■ PROGRAMMING TIME – 8µs by Word typical for Fast Factory Program – Double/Quadruple Word Program option – Enhanced Factory Program options ■ MEMORY BLOCKS – Multiple Bank Memory Array: 4 Mbit Banks – Parameter Blocks (Top or Bottom location) ■ SYNCHRONOUS / ASYNCHRONOUS READ – Synchronous Burst Read mode: 66MHz – Asynchronous/ Synchronous Page Read mode – Random Access: 70ns ■ DUAL OPERATIONS – Program Erase in one Bank while Read in others – No delay between Read and Write operations ■ Figure 1. Package FBGA Stacked TFBGA88 (ZAQ) BLOCK LOCKING – All blocks locked at Power-up – Any combination of blocks can be locked – WPF for Block Lock-Down ■ SECURITY – 128-bit user programmable OTP cells – 64-bit unique device number ■ COMMON FLASH INTERFACE (CFI) ■ 100,000 PROGRAM/ERASE CYCLES per BLOCK SRAM ■ ACCESS TIME: 70ns ■ LOW VDDS DATA RETENTION: 1.0V ■ POWER DOWN FEATURES USING TWO CHIP ENABLE INPUTS ■ Decembe...