M366S6453CTS

www.DataSheet4U.com M366S6453CTS M366S6453CTS SDRAM DIMM PC133/PC100 Unbuffered DIMM 64Mx64 SDRAM DIMM based on 32Mx8, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION The Samsung M366S6453CTS is a 64M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung M366S6453CTS consists of sixteen CMOS 32M x 8 bit with 4banks Synchronous DRAMs in TSOP-II 400mil package and a 2K EEPROM in 8-pin TSSOP package on a 168-pin glass-epoxy substrate. Two 0.1uF decoupling capacitors are mounted on the printed circuit board in parallel for each SDRAM. The M366S6453CTS is a Dual In-line Memory Module and is intended for mounting into 168-pin edge connector sockets. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable latencies allows the same device to be useful for a variety of high bandwidth, high performance memory system applications. FEATURE Performance range Part No. M366S6453CTS-L7C/C7C M366S6453CTS-L7A/C7A M366S6453CTS-L1H/C1H M366S6453CTS-L1L/C1L Burst mode operation Auto & self refresh capability (8192 Cycles/64ms) LVTTL compatible inputs and outputs Single 3.3V ± 0.3V power supply MRS cycle with address key programs Latency (Access from column address) Burst length (1, 2, 4, 8 & Full page) Data scramble (Sequential & Interleave) All inputs are sampled at the positive going edge of the system clock Serial presence...